Combinatorial investigation of ZrO2-based dielectric materials for dynamic random-access memory capacitors

被引：0
|
作者：
School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan [1 ]
不详 [2 ]
不详 [3 ]
不详 [4 ]
机构：
来源：
Jpn. J. Appl. Phys. | / 6 PART 2卷
关键词：
Compilation and indexing terms; Copyright 2025 Elsevier Inc;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Tantalum compounds - High-k dielectric - Silicon oxides - Dynamic random access storage - Zirconia - Pulsed laser deposition - Low-k dielectric - Metal insulator boundaries - MIM devices - Titanium compounds
引用
收藏
相关论文
共 50 条
  • [1] Combinatorial Investigation of ZrO2-Based Dielectric Materials for Dynamic Random-Access Memory Capacitors
    Kiyota, Yuji
    Itaka, Kenji
    Iwashita, Yuta
    Adachi, Tetsuya
    Chikyow, Toyohiro
    Ogura, Atsushi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (06)
  • [2] Combinatorial investigation of ZrO2-based dielectric materials for DRAM capacitors
    Kiyota, Y.
    Iwashita, Y.
    Itaka, K.
    Adachi, T.
    Chikyow, T.
    Ogura, A.
    PHYSICS AND TECHNOLOGY OF HIGH-K MATERIALS 8, 2010, 33 (03): : 339 - 346
  • [3] Effect of Heat Budget After Capacitor Formation on the Leakage Current Characteristics of ZrO2-Based High-k Dielectrics for Next-Generation Dynamic Random-Access Memory Capacitors
    Lee, Jong-Min
    Choi, Pyung-Ho
    Seo, Jong-Beom
    Choi, Byoung-Deog
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2020, 20 (01) : 367 - 372
  • [4] MoO2 as a thermally stable oxide electrode for dynamic random-access memory capacitors
    Lee, Woongkyu
    Cho, Cheol Jin
    Lee, Woo Chul
    Hwang, Cheol Seong
    Chang, Robert P. H.
    Kim, Seong Keun
    JOURNAL OF MATERIALS CHEMISTRY C, 2018, 6 (48) : 13250 - 13256
  • [5] DYNAMIC REFRESH FOR RANDOM-ACCESS MEMORY
    不详
    ELECTRONIC ENGINEERING, 1976, 48 (583): : 19 - 19
  • [6] Investigation and passivation of boron and hydrogen impurities in tetragonal ZrO2 dielectrics for dynamic random access memory capacitors
    Li, Guangzhuo
    Liu, Zhu-You
    Zhang, Cai-Xin
    Cai, Xuefen
    Yan, Lei
    Zhang, Chen
    Deng, Hui-Xiong
    JOURNAL OF APPLIED PHYSICS, 2023, 133 (12)
  • [7] 2D Materials-Based Static Random-Access Memory
    Liu, Chang-Ju
    Wan, Yi
    Li, Lain-Jong
    Lin, Chih-Pin
    Hou, Tuo-Hung
    Huang, Zi-Yuan
    Hu, Vita Pi-Ho
    ADVANCED MATERIALS, 2022, 34 (48)
  • [8] Future of dynamic random-access memory as main memory
    Kim, Seong Keun
    Popovici, Mihaela
    MRS BULLETIN, 2018, 43 (05) : 334 - 339
  • [9] Future of dynamic random-access memory as main memory
    Seong Keun Kim
    Mihaela Popovici
    MRS Bulletin, 2018, 43 : 334 - 339
  • [10] THE RANDOM-ACCESS MEMORY ACCOUNTING MACHINE .2. THE MAGNETIC-DISK, RANDOM-ACCESS MEMORY
    NOYES, T
    DICKINSON, WE
    IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1957, 1 (01) : 72 - 75
12345