Design of a low temperature coefficient bandgap reference with a wide temperature range

被引：0
|
作者：
An J. [1 ]
Wu C. [1 ]
机构：
[1] School of Electronic and Information Engineering, Soochow University, Suzhou
来源：
Xi'an Dianzi Keji Daxue Xuebao/Journal of Xidian University | 2021年 / 48卷 / 04期
关键词：
Bandgap reference; Low temperature coefficient; Wide temperature range;
D O I：
10.19665/j.issn1001-2400.2021.04.012
中图分类号：
学科分类号：
摘要：
In order to meet the requirements of different applications and markets for the accuracy and reliability of IoT chips, a low temperature coefficient bandgap reference with a wide temperature range is proposed. On the basis of the traditional Banba bandgap reference structure, the circuit utilizes high-order temperature compensation technology and piecewise temperature compensation technology to improve the curvature of the output reference voltage. The temperature coefficient of the circuit is reduced. At the same time, the operating temperature range of the circuit is extended. The circuit performances are verified in the TSMC 180 nm CMOS process. Test results show that the temperature coefficient of the circuit is as low as 7.2×10-6/℃ in the range of-40 ℃ to 160 ℃.The power supply rejection ratio at a low frequency is -48.52 dB. The static current under the 1.8 V power supply voltage is 68.38 μA, and the core area of the chip is 0.025 mm2. © 2021, The Editorial Board of Journal of Xidian University. All right reserved.
引用
收藏
页码：91 / 96
页数：5
相关论文
共 14 条
  • [1] ZHU G Q, YANG Y, ZHANG Q D., A 4.6 ppm/℃ High-Order Curvature Compensated Bandgap Reference for BMIC[J], IEEE Transactions on Circuits and Systems II:Express Briefs, 66, 9, pp. 1492-1496, (2018)
  • [2] WANG R, LU W, ZHAO M, Et al., A Sub-1 ppm/℃ Current-Mode CMOS Bandgap Reference with Piecewise Curvature Compensation, IEEE Transactions on Circuits and Systems I:Regular Papers, 65, 3, pp. 904-913, (2017)
  • [3] LIAO L, LOHAUS L, ATAC A, Et al., A Low Power Bandgap Voltage Reference Circuit with PSRR Enhancement[C], Proceedings of the PRIME 2012 8th Conference on Ph.D.Research in Microelectronics and Electronics, pp. 1-4, (2012)
  • [4] ABBASIZADEH H, CHO S H, YOO S S, Et al., Accurate Sub-1 V CMOS Bandgap Voltage Reference with PSRR of -118 dB, Journal of Semiconductor Technology and Science, 16, 4, pp. 528-523, (2016)
  • [5] DUAN J, ZHU Z, DENG J, Et al., A Novel 0.8V 79 nW CMOS-Only Voltage Reference with -55 dB PSRR@ 100 Hz[J], IEEE Transactions on Circuits and Systems II:Express Briefs, 65, 7, pp. 849-853, (2017)
  • [6] LU T, KER M, ZAN H., A 70 nW, 0.3 V Temperature Compensation Voltage Reference Consisting of Subthreshold MOSFETs in 65nm CMOS Technology[C], Proceedings of the 2016 International Symposium on VLSI Design, Automation and Test (VLSI-DAT), pp. 1-4, (2016)
  • [7] LEE I, SYLVESTER D, BLAAUW D., A Subthreshold Voltage Reference with Scalable Output Voltage for Low-Power IoT Systems, IEEE Journal of Solid-State Circuits, 52, 5, pp. 1443-1449, (2017)
  • [8] PARISI A, FINOCCHIARO A, PAPOTTO G, Et al., Nano-Power CMOS Voltage Reference for RF-Powered Systems, IEEE Transactions on Circuits and Systems II:Express Briefs, 65, 10, pp. 1425-1429, (2018)
  • [9] BANBA H, SHIGA H, UMEZAUA A, Et al., A CMOS Bandgap Reference Circuit with Sub-1 V Operation, IEEE Journal of Solid-State Circuits, 34, 5, pp. 670-674, (1999)
  • [10] YANNIS P., Accurate Analysis of Temperature Effects in IC-VBE Characteristics with Application to Bandgap Reference Sources, IEEE Journal of Solid-State Circuits, 6, pp. 1076-1083, (1980)
12