Erratum: Border trap evaluation for SiO2/GeO2/Ge gate stacks using deep-level transient spectroscopy (J. Appl. Phys. (2018) 124 (205303) DOI: 10.1063/1.505529)

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作者：
Wen, Wei-Chen [1 ]
Yamamoto, Keisuke [1 ]
Wang, Dong [1 ]
Nakashima, Hiroshi [2 ]
机构：
[1] Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, 6-1 Kasuga-koen, Fukuoka,816-8580, Japan
[2] Global Innovation Center, Kyushu University, 6-1 Kasuga-koen, Fukuoka,816-8580, Japan
来源：
Journal of Applied Physics | 2020年 / 127卷 / 16期
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  • [2] Border trap evaluation for SiO2/GeO2/Ge gate stacks using deep-level transient spectroscopy
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