Band bending at the surfaces of In-rich InGaN alloys

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作者：
Bailey, L.R. [1 ]
Veal, T.D. [1 ]
King, P.D.C. [1 ]
McConville, C.F. [1 ]
Pereiro, J. [2 ]
Grandal, J. [2 ]
Sánchez-García, M.A. [2 ]
Muoz, E. [2 ]
Calleja, E. [2 ]
机构：
[1] Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
[2] ISOM, Departamento De Ingeniería Electrónica, Ciudad Universitaria, 28040 Madrid, Spain
来源：
Journal of Applied Physics | 2008年 / 104卷 / 11期
关键词：
The band bending and carrier concentration profiles as a function of depth below the surface for oxidized Inx Ga1-x N alloys with a composition range of 0.39x1.00 are investigated using x-ray photoelectron; infrared reflection; and optical absorption spectroscopies; and solutions of Poisson's equation within a modified Thomas-Fermi approximation. All of these InGaN samples exhibit downward band bending ranging from 0.19 to 0.66 eV and a high surface sheet charge density ranging from 5.0 1012 to 1.5 1013 cm-2. The downward band bending is more pronounced in the most In-rich InGaN samples; resulting in larger near-surface electron concentrations. © 2008 American Institute of Physics;
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