Characterization of HfSiON gate dielectrics using monoenergetic positron beams

被引：0

作者：

Uedono, A. ^{[1
,3
]}

Ikeuchi, K. ^{[1
]}

Otsuka, T. ^{[1
]}

Shiraishi, K. ^{[1
,3
]}

Yamabe, K. ^{[1
,3
]}

Miyazaki, S. ^{[2
]}

Umezawa, N. ^{[3
]}

Hamid, A. ^{[3
,7
]}

Chikyow, T. ^{[3
]}

Ohdaira, T. ^{[4
]}

Muramatsu, M. ^{[4
]}

Suzuki, R. ^{[4
]}

Inumiya, S. ^{[5
]}

Kamiyama, S. ^{[5
]}

Akasaka, Y. ^{[5
]}

Nara, Y. ^{[5
]}

Yamada, K. ^{[3
,6
]}

机构：

[1] Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

[2] Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8530, Japan

[3] Nanomaterials Laboratory, National Institute for Materials Science, 3-13 Sakura, Tsukuba, Ibaraki 305-0003, Japan

[4] National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

[5] Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

[6] Nano Technology Research Laboratory, Waseda University, 513, Waseda-Tsurumaki, Shinjuku, Tokyo 16-0041, Japan

[7] Department of Physics, Faculty of Science, Helwan University, Helwan 11735, Cairo, Egypt

来源：

Journal of Applied Physics | 2006年 / 99卷 / 05期

关键词：

The impact of nitridation on open volumes in thin HfSiOx films fabricated on Si substrates by atomic layer deposition was studied using monoenergetic positron beams. For HfSiOx; positrons were found to annihilate from the trapped state due to open volumes which exist intrinsically in an amorphous structure. After plasma nitridation; the size of open volumes decreased at a nitrogen concentration of about 20 at. %. An expansion of open volumes; however; was observed after postnitridation annealing (PNA) (1050°C; 5 s). We found that the size of open volumes increased with increasing nitrogen concentration in HfSiOx. The change in the size of open volumes was attributed to the trapping of nitrogen by open volumes; and an incorporation of nitrogen into the amorphous matrix of HfSiOx during PNA. We also examined the role of nitrogen in HfSiOx using x-ray photoelectron spectroscopy and first principles calculations. © 2006 American Institute of Physics;

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Uedono, A
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