Silica structural changes induced by thermal treatment or ionic implantation as probed by IR reflectance spectroscopy

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作者：
Bibent, N. [1 ]
Faivre, A. [1 ]
Ferru, G. [1 ]
Bantignies, J.-L. [2 ]
Peuget, S. [3 ]
机构：
[1] GES, UMR 5650, Universit de Montpellier 2, Place Eugne Bataillon 34095, Montpellier Cedex 5, France
[2] LCVN, UMR 5587, Universit de Montpellier 2, Place Eugne Bataillon, Montpellier Cedex 5, France
[3] DEN/DTCD/SECM CEA, Marcoule, BP 17171, 30207 Bagnols-sur-Cze Cedex, France
来源：
Journal of Applied Physics | 2009年 / 106卷 / 06期
关键词：
Fourier transformed infrared microreflectance spectroscopy is used to probe and compare the consequences of thermal quenching or ionic implantation on the structure of silica. A linear change in the main structural feature associated with Si-O-Si vibration with fictive temperature (Tf) is observed up to Tf =1400 °C. Ionic implantation is shown to shift the frequency of the main IR Si-O-Si vibration toward much lower wavenumbers; for all deposited energies; indicating that a comparison can be drawn between fictive temperature and irradiation effects. Extrapolating the linear changes in the IR structural bands obtained as a function of Tf for the implanted samples; we show that two structural (TO) and (B) contributions are not affected by ionic implantation; as they would be by a unique very high Tf. In the case of ionic implantation; we also evidence the development of some specific structural contributions indicating a depolymerization of silica network. © 2009 American Institute of Physics;
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