Morphology and Optical Properties of GaN Micro-pyramid Structure

被引：0
|
作者：
Tong G.-Y. [1 ,2 ]
Jia W. [1 ,2 ]
Fan T. [1 ,2 ]
Dong H.-L. [1 ,2 ]
Li T.-B. [1 ,2 ]
Jia Z.-G. [1 ,2 ]
Xu B.-S. [1 ,2 ]
机构：
[1] Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan
[2] Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of Technology, Taiyuan
来源：
Faguang Xuebao/Chinese Journal of Luminescence | 2019年 / 40卷 / 01期
基金：
中国国家自然科学基金;
关键词：
GaN micro-pyramid; Metal-organic chemical vapor deposition; Optical materials; Quantum dot;
D O I：
10.3788/fgxb20194001.0023
中图分类号：
学科分类号：
摘要：
The recently developed 3D GaN-based light emitting diodes (LEDs) can solve problems associated with typical GaN-based thin film LEDs including the quantum-confined Stark effect, efficiency droop, and monochromatic wavelength. To resolve these issues, the micro-pyramids were synthesized and their luminescence properties were subsequently studied. First, GaN micro-pyramids with a base size of 8 μm and height of 7.5 μm were successfully fabricated after SiNx was deposited in situ by MOCVD, followed by three deposition periods of InGaN/GaN multiple quantum wells on the semi-polar facet of the GaN micro-pyramids. The cathodoluminescence measurements showed that the wavelength of the emission peaks varied on the semi-polar facet of the GaN micro-pyramids. According to micro-photoluminescence measurements obtained using different excitation power densities, the polarization field on the semi-polar facets of the GaN micro-pyramids containing InGaN/GaN multiple quantum wells was rather weak. The atomic migration mechanism was determined from the cathodoluminescence and transmission electron microscopy results. The GaN micro-pyramids can possibly be used for fabricating LEDs with multi-color emission due to their unique structures and optical properties. © 2019, Science Press. All right reserved.
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页码：23 / 29
页数：6
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