Planar Hall-effect magnetic random access memory

被引：0
|
作者：
Bason, Y. [1 ]
Klein, L. [1 ]
Yau, J.-B. [2 ]
Hong, X. [2 ]
Hoffman, J. [2 ]
Ahn, C.H. [2 ]
机构：
[1] Department of Physics, Bar Ilan University, Ramat Gan 52900, Israel
[2] Department of Applied Physics, Yale University, New Haven, CT 06520-8284
来源：
Journal of Applied Physics | 2006年 / 99卷 / 08期
关键词：
We suggest a type of magnetic random access memory (MRAM) that is based on the phenomenon of the planar Hall effect (PHE) in magnetic films; and we demonstrate this idea with manganite films. The PHE-MRAM is structurally simpler than the currently developed MRAM that is based on magnetoresistance tunnel junctions; with the tunnel junction structure being replaced by a single-layer film. © 2006 American Institute of Physics;
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