Analysis and Parameters Design Method of Push-pull Capacitor Auxiliary Circuit to Suppress SiC MOSFET Bridge-leg Crosstalk and Gate-source Voltage Oscillation

被引：0
|
作者：
Li X. [1 ]
Lin M. [1 ]
Wang W. [2 ]
Wu F. [1 ]
He S. [3 ]
机构：
[1] School of Electrical Engineering, China University of Mining and Technology, Xuzhou
[2] Lianyungang Power Supply Branch, State Grid Jiangsu Electric Power Co., Ltd., Lianyungang
[3] Monolithic Power Systems, Inc., Hangzhou
来源：
Gaodianya Jishu/High Voltage Engineering | 2023年 / 49卷 / 01期
基金：
中国国家自然科学基金; 中国博士后科学基金;
关键词：
bridge-leg crosstalk; gate-source voltage oscillation; push-pull-capacitor auxiliary circuit; SiC MOSFET; switching speed;
D O I：
10.13336/j.1003-6520.hve.20211408
中图分类号：
学科分类号：
摘要：
The bridge-leg crosstalk and gate-source voltage oscillation in high speed switching seriously restricts the switching speed of SiC MOSFET. In this paper, the driving process of SiC MOSFET based on push-pull capacitor auxiliary circuit (PPCAC) is further analyzed. Combining with the analysis, the bridge-leg crosstalk and gate-source voltage oscillation caused by drain-source voltage oscillation of SiC MOSFET are normalized. By constraining the charging and discharging time of push-pull capacitor and the bridge-leg crosstalk, this paper proposes a design method of push-pull capacitances. Through this design method, PPCAC driver can improve its turn-on and turn off speed of SiC MOSFET on the basis of suppressing the bridge-leg crosstalk and gate-source voltage oscillation. The experimental results verify the effectiveness of the proposed design. © 2023 Science Press. All rights reserved.
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页码：226 / 238
页数：12
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