Magnetization reversal of Ga1-xMnxAs layers separated by a nonmagnetic spacer

被引：0
|
作者：
Kirby, B.J. [1 ]
Borchers, J.A. [1 ]
Liu, X. [2 ]
Ge, Z. [2 ]
Cho, Y.J. [2 ]
Dobrowolska, M. [2 ]
Furdyna, J.K. [2 ]
机构：
[1] Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, MD 20899, United States
[2] Department of Physics, University of Notre Dame, Notre Dame, IN 46556, United States
来源：
Journal of Applied Physics | 2008年 / 103卷 / 07期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Conference article (CA)
引用
收藏
相关论文
共 50 条
  • [1] Magnetization reversal of Ga1-xMnxAs layers separated by a nonmagnetic spacer
    Kirby, B. J.
    Borchers, J. A.
    Liu, X.
    Ge, Z.
    Cho, Y. J.
    Dobrowolska, M.
    Furdyna, J. K.
    JOURNAL OF APPLIED PHYSICS, 2008, 103 (07)
  • [2] Definitive evidence of interlayer coupling between Ga1-xMnxAs layers separated by a nonmagnetic spacer
    Kirby, B. J.
    Borchers, J. A.
    Liu, X.
    Ge, Z.
    Cho, Y. J.
    Dobrowolska, M.
    Furdyna, J. K.
    PHYSICAL REVIEW B, 2007, 76 (20)
  • [3] Measurement of magnetization of Ga1-xMnxAs by ferromagnetic resonance
    Hagmann, J. A.
    Traudt, K.
    Zhou, Y. Y.
    Liu, X.
    Dobrowolska, M.
    Furdyna, J. K.
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2014, 360 : 137 - 142
  • [4] Magnetoresistance of Ga1-xMnxAs epitaxial layers doped by Be
    Yuldashev, SU
    Im, H
    Yalishev, VS
    Park, CS
    Kang, TW
    Lee, S
    Sasaki, Y
    Liu, X
    Furdyna, JK
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (10): : 6256 - 6259
  • [5] Effect of pinning-field distribution on the process of magnetization reversal in Ga1-xMnxAs films
    Kim, Jungtaek
    Lee, Hakjoon
    Yoo, Taehee
    Lee, Sanghoon
    Liu, X.
    Furdyna, J. K.
    PHYSICAL REVIEW B, 2011, 84 (18):
  • [6] Magnetic anisotropy and magnetization reversal in Ga1-xMnxAs layers studied by polarized neutron reflectometry -: art. no. 123909
    Primus, JL
    Fritzsche, H
    Malfait, M
    Van Bael, MJ
    De Boeck, J
    Temst, K
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (12)
  • [7] Coercive field and magnetization deficit in Ga1-xMnxAs epilayers
    Potashnik, S.J. (schiffer@phys.psu.edu), 1600, American Institute of Physics Inc. (93):
  • [8] Coercive field and magnetization deficit in Ga1-xMnxAs epilayers
    Potashnik, SJ
    Ku, KC
    Wang, RF
    Stone, MB
    Samarth, N
    Schiffer, P
    Chun, SH
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (10) : 6784 - 6786
  • [9] Effect of additional nonmagnetic acceptor doping on the resistivity peak and the Curie temperature of Ga1-xMnxAs epitaxial layers
    Yuldashev, SU
    Im, H
    Yalishev, VS
    Park, CS
    Kang, TW
    Lee, S
    Sasaki, Y
    Liu, X
    Furdyna, JK
    APPLIED PHYSICS LETTERS, 2003, 82 (08) : 1206 - 1208
  • [10] Magnetization dependent photoconductivity of Ga1-xMnxAs/ZnSe diode structures
    Chun, SH
    Yu, JP
    Lee, JS
    Woo, JC
    Potashnik, SJ
    Schiffer, P
    Samarth, N
    COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS, 2005, 184 : 135 - 138
12345