Chemical vapour deposition of WSi2 thin films: Equilibrium W-Si-H-Cl-Ar system

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作者：
Rao, Y.K. [1 ]
机构：
[1] Department of Materials Science and Engineering, University of Washington, Box 352120, Seattle, WA 98195, United States
来源：
Journal of Alloys and Compounds | 2008年 / 452卷 / 01期
关键词：
Tungsten disilicide (WSi2) can be used in lieu of polycrystalline silicon in very large scale integrated (VLSI) circuit manufacturing; WSi2(s) thin films have been deposited from a vapour-mix of WCl4; SiH2Cl2 (or SiH4); H2; and an argon diluent. The present work describes an equilibrium model for the W-Si-H-Cl-Ar system: the feed-gas mixture is characterized by the atom-ratios (Ar/H); (H/Cl); and; (W/Si); during the chemical vapour deposition (CVD); only the latter ratio is expected to change as one or more of condensed phases Si(s); WSi2(s); W5Si3(s) and W(s) begin to form. In this work; the CVD-phase diagram was constructed by means of an iterative method that was coupled to the De Donder's extent of reaction formalism; the respective phase-domain boundaries Si(s) + WSi2(s)/WSi2(s)/WSi2(s) + W5Si3(s) were computed for the temperature range of 800-1000 K at 1 atm (101.325 kPa); the SiH2Cl2-content of the feed-gas mixture; characterized by F = [Si0/(Si0 + W0); was gradually decreased ensuring a complete sweep from the Si(s) + WSi2(s) two-phase-domain to the phase-mixture WSi2(s) + W5Si3(s) for specific (H/Cl) and (Ar/H) ratios. The results are of value in determining the CVD-phase diagrams for the growth of crystalline materials. © 2007 Elsevier B.V. All rights reserved;
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页码：116 / 121
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