Magnetoresistance of spin valve structures based on the full Heusler alloy Co2MnSi

被引：0
|
作者：
Singh, L.J. [1 ]
Leung, C.W. [2 ]
Bell, C. [3 ]
Prieto, J.L. [4 ]
Barber, Z.H. [1 ]
机构：
[1] Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, United Kingdom
[2] Department of Applied Physics, Hong Kong Polytechnic University, Kowloon, Hong Kong
[3] Kamerlingh Onnes Laboratory, Universiteit Leiden, Leiden, Netherlands
[4] Instituto de Sistemas Optoelectronics y Microtecnologia, Avenida Complutense s/n, Madrid 28040, Spain
来源：
Journal of Applied Physics | 2006年 / 100卷 / 01期
关键词：
Co2MnSi/Cu/Co pseudo-spin-valves (PSVs) have been grown by dc magnetron sputtering from elemental targets onto GaAs(001). The stoichiometric Heusler layer was highly textured; following the [001] orientation of the lattice matched GaAs(001). Hysteresis loops showed independent switching of the magnetization of the two ferromagnetic layers. Transport measurements of the samples were performed in both the current in plane (CIP) and current perpendicular to plane (CPP) geometries. Clear low-field spin valve contributions were observed at 15 K for the CIP PSV; a conventionally patterned mesa CPP device and a CPP device fabricated in the focused ion beam microscope. Analysis of the CPP data did not show the half-metallic behavior of Co 2MnSi as expected from theory. © 2006 American Institute of Physics;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [1] Magnetoresistance of spin valve structures based on the full Heusler alloy Co2MnSi
    Singh, L. J.
    Leung, C. W.
    Bell, C.
    Prieto, J. L.
    Barber, Z. H.
    JOURNAL OF APPLIED PHYSICS, 2006, 100 (01)
  • [2] Current-perpendicular-to-plane giant magnetoresistance of a spin valve using Co2MnSi Heusler alloy electrodes
    Kodama, K.
    Furubayashi, T.
    Sukegawa, H.
    Nakatani, T. M.
    Inomata, K.
    Hono, K.
    JOURNAL OF APPLIED PHYSICS, 2009, 105 (07)
  • [3] Room-temperature magnetoresistance in organic spin-valves based on a Co2MnSi Heusler alloy
    Kawasugi, Yoshitaka
    Ujino, Tomohiro
    Tada, Hirokazu
    ORGANIC ELECTRONICS, 2013, 14 (12) : 3186 - 3189
  • [4] Surface spin polarization of the nonstoichiometric Heusler alloy Co2MnSi
    Wuestenberg, Jan-Peter
    Fetzer, Roman
    Aeschlimann, Martin
    Cinchetti, Mirko
    Minar, Jan
    Braun, Juergen
    Ebert, Hubert
    Ishikawa, Takayuki
    Uemura, Tetsuya
    Yamamoto, Masafumi
    PHYSICAL REVIEW B, 2012, 85 (06)
  • [5] Spin polarized carrier injection from full Heusler alloy Co2MnSi into superconducting NbN
    Kumar, Dushyant
    Joshi, P. C.
    Hossain, Z.
    Budhani, R. C.
    APPLIED PHYSICS LETTERS, 2013, 102 (11)
  • [6] Huge tunneling magnetoresistance in magnetic tunnel junction with Heusler alloy Co2MnSi electrodes
    Hu, Yu-jie
    Huang, Jing
    Wang, Jia-ning
    Li, Qun-xiang
    CHINESE JOURNAL OF CHEMICAL PHYSICS, 2021, 34 (03) : 273 - 280
  • [7] Co2MnSi as full Heusler alloy ferromagnetic electrode in magnetic tunneling junctions
    Reiss, G.
    Huetten, A.
    Kaemmerer, S.
    Schmalhorst, J.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 5, 2006, 3 (05): : 1322 - +
  • [8] Magnetoresistive Properties of Co2MnSi Heusler Alloy Films
    Dai, N. V.
    Seo, M. S.
    Eom, T. W.
    Lee, Y. P.
    Lee, S. J.
    Jang, M.
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2009, 55 (03) : 1255 - 1258
  • [9] Growth of all-epitaxial Co2MnSi/Ge/Co2MnSi vertical spin-valve structures on Si
    Yamada, Atsuya
    Yamada, Michihiro
    Kusumoto, Shuhei
    Nascimento, Julio A. do
    Murrill, Connor
    Yamada, Shinya
    Sawano, Kentarou
    Lazarov, Vlado K.
    Hamaya, Kohei
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2024, 173
  • [10] Exploring the physical properties of Co2MnSi full Heusler alloy: a first principles study
    Arvind Kumar
    Neelabh Srivastava
    Vikrant Chaudhary
    Anadi Krishna Atul
    Swati Jharwal
    Amit Singh Negi
    Brijmohan Prajapati
    Rishi P. Singh
    Manish Kumar
    Jitesh Kumar
    Optical and Quantum Electronics, 2024, 56
12345