Luminescent performances of green InGaN/GaN MQW LED employing superlattices strain adjusting structures

被引：0

作者：

Wang X.-L. ^{[1
]}

Wang W.-X. ^{[1
]}

Jiang Y. ^{[1
]}

Ma Z.-G. ^{[1
]}

Cui Y.-X. ^{[1
]}

Jia H.-Q. ^{[1
]}

Song J. ^{[2
]}

Chen H. ^{[1
]}

机构：

[1] Renewable Energy Laboratory, Institute of Physics, Chinese Academy of Sciences

[2] Tianjing Zhonghuan Neolight Technology Company

来源：

Faguang Xuebao/Chinese Journal of Luminescence | 2011年 / 32卷 / 11期

关键词：

Electroluminescence; InGaN/GaN multi-quantum wells; Photoluminescence; Superlattices;

D O I：

10.3788/fgxb20113211.1152

中图分类号：

学科分类号：

摘要：

Green InGaN/GaN multiple quantum well(MQW) LEDs employing InGaN/GaN superlattice(SL) structure were studied. The distribution of indium within the MQWs is changed by inserting the InGaN/GaN SL. Meanwhile, the average indium content of MQW does not change. Two InGaN-related peaks that were clearly found in the electroluminescence(EL) and photoluminescence(PL) spectrum, which are assigned to In-rich quantum dots(QD) and the InGaN matrix, respectively. It is suggested that the carrier drifts from the InGaN matrix to the In-rich QD. It could be concluded that employing SL structures is an effective way to adjust the wavelength of InGaN/GaN MQW without introducing new defects in the MQWs.

引用

页码：1152 / 1158

页数：6

共 20 条

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