Determination of interfacial residual stresses in SiC(f)/Ti-22Al/26Nb composites using raman spectroscopy

被引：0
|
作者：
Xiao, Peng [1 ]
Wang, Yumin [1 ]
Lei, Jiafeng [1 ]
Shi, Nanlin [1 ]
Yang, Rui [1 ]
机构：
[1] Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
来源：
Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering | 2011年 / 40卷 / 09期
关键词：
Silicon carbide - Aluminum compounds - Titanium compounds - Niobium compounds - Thermal expansion - Finite element method - Carbon - Raman spectroscopy;
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摘要：
Raman spectroscopy was used to measure residual stress of carbon layer on SiC fibre embedded longitudinally in SiC(f)/Ti-22Al-26Nb composites with different reaction layers. By measuring the band shifts of carbon layer, the residual stress arising from thermal expansion mismatch was also determined from the SiC fibre. Results show that as the thickness of reaction layer increases the interfacial residual stress dramatically decreases. Finite element analyses have similar results with the test. Copyright © 2011, Northwest Institute for Nonferrous Metal Research.
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页码：1540 / 1543
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