Generalized current-voltage analysis and efficiency limitations in non-ideal solar cells: Case of Cu2ZnSn(SxSe 1-x)4 and Cu2Zn(SnyGe 1-y)(SxSe1-x)4

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[1] Hages, Charles J.
[2] Carter, Nathaniel J.
[3] Agrawal, Rakesh
[4] Unold, Thomas
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Agrawal, R. (agrawalr@purdue.edu) | 1600年 / American Institute of Physics Inc.卷 / 115期
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Detailed electrical characterization of nanoparticle based Cu 2ZnSn(SxSe1-x)4 (CZTSSe) and Cu 2Zn(SnyGe1-y)(SxSe 1-x)4 (CZTGeSSe) solar cells has been conducted to understand the origin of device limitations in this material system. Specifically; temperature dependent current-voltage analysis has been considered; with particular application to the characterization of solar cells with non-ideal device behavior. Due to the presence of such non-ideal device behavior; typical analysis techniques - commonly applied to kesterite-type solar cells - are found to be insufficient to understand performance limitations; and an analysis methodology is presented to account for the non-idealities. Here; the origin of non-ideal device behavior is chiefly considered in terms of electrostatic and band gap potential fluctuations; low minority carrier lifetimes; temperature dependent band edges; high surface/bulk recombination rates; and tunneling enhanced recombination. For CZTSSe and CZTGeSSe; the main limitations to improved device performance (voltage limitations) are found to be associated with significant EA deficits (EA-E G) at 300 K; large ideality factors; and voltage-dependent carrier collection; which we associate with the bulk material properties of the absorbers. The material origin of these non-ideal electrical properties is considered. Additionally; for CZTGeSSe; the effect of Ge-incorporation on the electrical properties of the solar cells is discussed; with improvements in the electrical properties characterized for the Ge-alloyed devices. © 2014 AIP Publishing LLC;
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