RF performance of AlGaN/GaN high-electron-mobility transistors grown on silicon (110)

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作者：
Millimeter-Wave Electronics Group, ETH-Zürich, Gloriastrasse 35, CH-8092 Zürich, Switzerland [1 ]
不详 [2 ]
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来源：
Appl. Phys. Express | / 6卷
关键词：
Compendex;
D O I：
064105
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摘要：
Cutoff frequency
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