Memristor-based circuit design of BiLSTM network

被引:1
|
作者
Yang, Le [1 ]
Lei, Jun [1 ]
Cheng, Ming [1 ]
Ding, Zhixia [1 ]
Li, Sai [1 ]
Zeng, Zhigang [2 ]
机构
[1] Wuhan Inst Technol, Sch Elect & Informat Engn, Wuhan 430205, Peoples R China
[2] Huazhong Univ Sci & Technol, Sch Artificial Intelligence & Automat, Wuhan 430074, Peoples R China
基金
中国国家自然科学基金;
关键词
Memristor-based neural network; Memristor-based circuit design; Bidirectional long short-term memory network; Normalization circuit; Resnet circuit; LSTM;
D O I
10.1016/j.neunet.2024.106780
中图分类号
TP18 [人工智能理论];
学科分类号
081104 ; 0812 ; 0835 ; 1405 ;
摘要
The bidirectional long short-term memory (BiLSTM) network involves significant amount of parameter computations. This paper proposes the memristor-based bidirectional long short-term memory (MBiLSTM) network, with its capability of in-memory computing and parallel computing, can accelerates the parameter computations speed. The MBiLSTM network circuit is composed of normalization circuit, two memristor-based long short-term memory (LSTM) circuits, memristor-based resnet circuit, memristor-based dense circuitand winner-take-all (WTA) circuit. The voltage signals are scaled to the setting range by normalization circuit, memristor-based LSTM circuit is responsible for extracting features from the dataset, memristor-based resnet circuit can enhance the overall performance of the network, memristor-based dense circuit ensures that the final outputs dimension matches the dimension of the target signals, WTA circuit outputs the maximum voltage of memristor-based dense circuit. The effectiveness of the MBiLSTM network is validated through gait recognition experiment and handwritten digit recognition experiment. The stability, robustness and potential errors in the manufacturing process of memristance are analyzed.
引用
收藏
页数:10
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