Enhanced Hole Injection of GaN Based Green LEDs by Inducing Carrier Transport Through V-pits

被引：0
|
作者：
Zhang D. [1 ]
Yang D. [1 ]
Xu C. [1 ]
Liu H. [2 ]
Bao L. [1 ]
机构：
[1] Department of Electronic Science, School of Electronic Science and Engineering, Xiamen University, Xiamen
[2] Xiamen San’an Optoelectronic Company Ltd., Xiamen
来源：
Faguang Xuebao/Chinese Journal of Luminescence | 2024年 / 45卷 / 05期
基金：
中国国家自然科学基金;
关键词：
hole injection; InGaN/GaN MQWs; last quantum barrier; light-emitting diodes; V-pits;
D O I：
10.37188/CJL.20240027
中图分类号：
学科分类号：
摘要：
In order to improve the hole injection efficiency of GaN based multiple quantum wells LED by utilizing V-pits，mini-LEDs with different structures of last quantum barrier（LQB）layer were fabricated. The LQB structures of the four samples are GaN（10 nm），AlN（10 nm），Al0. 14Ga0. 86N（10 nm），and GaN（8. 6 nm）/AlN（1. 4 nm），respectively. The recombination mechanisms were studied in these samples with low-temperature electroluminescence spectra，and further validations were carried out through current voltage characteristics testing. The results indicate that a larger proportion of holes transported to deeper quantum wells in samples with AlGaN or GaN/AlN LQB. Experimental results show that the main reason of this improvement is the increasing proportion of holes injected through sidewall quantum wells of V-pits due to the suppression of hole injection through the c-plane MQWs，thereby enhancing hole injection efficiency. LEDs with GaN/AlN LQB exhibit lower forward voltage and higher luminous efficiency. On the other hand，a larger V-pits transport ratio can increase the non-radiative recombination rate，whereas limits the efficiency of samples with AlGaN LQB. We conducted a detailed study on the carrier transport mechanisms and the roles of V-pits in GaN based LED devices. © 2024 Editorial Office of Chinese Optics. All rights reserved.
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页码：800 / 808
页数：8
相关论文
共 33 条
  • [1] LI J H, XING Y H, Et al., GaN grown on sputtered AlN/Mo/Sc<sub>0. 2</sub>Al<sub>0. 8</sub>N composite structure with different Mo thickness［J］, Chin. J. Lumin, 44, 6, pp. 1077-1084, (2023)
  • [2] KUANG H, HUANG Z, XIONG Z H, Et al., A review of the effect of GaN-based micro-LED sidewall on external quantum efficiency and sidewall treatment techniques［J］, Chin. Opt, 16, 6, pp. 1305-1317, (2023)
  • [3] WONG M S, NAKAMURA S, DENBAARS S P., Review：progress in high performance III-nitride micro-light-emitting diodes［J］, ECS J. Solid State Sci. Technol, 9, 1, (2020)
  • [4] LIN Y，, ZHOU L, FAN B L, Et al., High stable micro green light-emitting diodes based on ZnO∶Ga/InGaN heterojunction［J］, Chin. J. Lumin, 43, 12, pp. 1965-1973, (2022)
  • [5] NAKAMURA S, SENOH M S M, MUKAI T M T., Highly p-typed Mg-doped GaN films grown with GaN buffer layers［J］, Jpn. J. Appl. Phys, 30, 10A, pp. L1708-L1711, (1991)
  • [6] QUAN Z J, WANG L, ZHENG C D，, Et al., Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/ GaN multiple quantum well light-emitting diodes［J］, J. Appl. Phys, 116, 18, (2014)
  • [7] YEN S H, TSAI M C, TSAI M L, Et al., Effect of n-type AlGaN layer on carrier transportation and efficiency droop of blue InGaN light-emitting diodes［J］, IEEE Photonics Technol. Lett, 21, 14, pp. 975-977, (2009)
  • [8] ZHANG Y Y, YIN Y A., Performance enhancement of blue light-emitting diodes with a special designed AlGaN/GaN superlattice electron-blocking layer［J］, Appl. Phys. Lett, 99, 22, (2011)
  • [9] LI Y F, YUN F，SU X L, Et al., Deep hole injection assisted by large V-shape pits in InGaN/GaN multiple-quantum-wells blue light-emitting diodes［J］, J. Appl. Phys, 116, 12, (2014)
  • [10] Experimental evidence of hole injection through V-defects in long wavelength GaN-based LEDs［J］, Appl. Phys. Lett, 123, 20, (2023)
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