Passively mode-locked Yb-doped fiber laser with graphene epitaxially grown on 6H-SiC substrates

被引：0
|
作者：
Liu J. [1 ]
Wei R. [2 ]
Xu J. [1 ]
Xu X. [2 ]
Wang P. [1 ]
机构：
[1] Institute of Laser Engineering, National Center of Laser Technology, Beijing University of Technology
[2] State Key Laboratory of Crystal Materials, Shandong University, Jinan
来源：
Zhongguo Jiguang/Chinese Journal of Lasers | 2011年 / 38卷 / 08期
关键词：
Epitaxial graphene; Fiber laser; Lasers; Passively mode-locked; SiC substrates;
D O I：
10.3788/CJL201138.0802003
中图分类号：
学科分类号：
摘要：
We report all-normal-dispersion passively mode-locked Yb-doped fiber laser by graphene epitaxially grown on 6H-SiC substrates in a ring cavity configuration. Stable mode-locked pulses of the fiber laser are obtained at about 250 mW incident pump power and the pulse repetition rate is 1.05 MHz; Increasing the incident pump power to 480 mW, the average output power is 20 mW, which corresponds to single pulse energy of up to 19 nJ with pulse width of about 520 ps.
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