Optical properties and structural investigations of (11-22)-oriented GaN/Al0.5Ga0.5N quantum wells grown by molecular beam epitaxy

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[1] [1,2,Rosales, Daniel
[2] 1,Gil, Bernard
[3] 1,Bretagnon, Thierry
[4] Brault, Julien
[5] Vennéguès, Philippe
[6] Nemoz, Maud
[7] De Mierry, Philippe
[8] Damilano, Benjamin
[9] Massies, Jean
[10] Bigenwald, Pierre
来源：
Rosales, Daniel | 1600年 / American Institute of Physics Inc.卷 / 118期
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Gallium nitride;
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