Review on Health Management Technology of Vehicle IGBT Module

被引:0
|
作者
Niu G. [1 ]
Liu Z. [1 ]
Yu X. [1 ]
机构
[1] Institute of Rail Transit (IRT), Tongji University, Shanghai
来源
关键词
condition monitoring; failure mechanism; fault diagnosis; fault prognosis; vehicle IGBT module;
D O I
10.11908/j.issn.0253-374x.21418
中图分类号
TN3 [半导体技术]; TN4 [微电子学、集成电路(IC)];
学科分类号
0805 ; 080501 ; 080502 ; 080903 ; 1401 ;
摘要
The research progress of health management technology for vehicle IGBT module was reviewed from four aspects:failure mechanism,condition monitoring,fault diagnosis,damage assessment and life prediction. The key problems and technical advantages and disadvantages of the current research were pointed out. Moreover,the future development trend of health management technology for vehicle IGBT module was prospected. © 2022 Science Press. All rights reserved.
引用
收藏
页码:1026 / 1034
页数:8
相关论文
共 50 条
  • [1] YANG S,, BRYANT A, Et al., An industry based survey of reliability in power electronic converters[J], IEEE Transactions on Industry Applications, 47, 3, (2011)
  • [2] WANG F., Junction temperature measurement of IGBTs using short-circuit current as a temperature-sensitive electrical parameter for converter prototype evaluation[J], IEEE Transactions on Industrial Electronics, 62, 6, (2015)
  • [3] SINGH A, ANAND S., Evaluation of Vce at inflection point for monitoring bond wire degradation in discrete packaged IGBTs [J], IEEE Transactions on Power Electronics, 32, 4, (2017)
  • [4] Zhigang LI, LI Xiong, ZHANG Qiang, Et al., Rapid assessment method of IGBT junction temperature in inverter under sinusoidal pulse width modulation[J], High Voltage Engineering, 43, 11, (2017)
  • [5] STRAUSS B,, LINDEMANN A., Measuring the junction temperature of an IGBT using its threshold voltage as a temperature sensitive electrical parameter(TSEP)[C], IEEE. 2016 13th International Multi-Conference on Systems,Signals & Devices(SSD), pp. 459-467, (2016)
  • [6] LI Wuhua, CHEN Yuxiang, LUO Haoze, Et al., Review and prospect of junction temperature extraction principle of high power semiconductor devices[J], Proceedings of the CSEE, 36, 13, (2016)
  • [7] BAKER N,, IANNUZZO F., The temperature dependence of the flatband voltage in high-power IGBTs [J], IEEE Transactions on Industrial Electronics, 66, 7, (2018)
  • [8] A high precision on-line detection method for IGBT junction temperature based on stepwise regression algorithm[J], IEEE Access, 8, (2020)
  • [9] WANG X,, ZHU C,, LUO H,, Et al., IGBT junction temperature measurement via combined TSEPs with collector current impact elimination, 2016 IEEE Energy Conversion Congress and Exposition(ECCE), (2016)
  • [10] GONG Can, SUN Pengju, Xiong Du, Et al., Research on condition monitoring for defects inside IGBT modules based on voltage drop of bond wires[J], Journal of Power Supply, 14, 6, (2016)