Erratum: Deep level defects in proton radiated GaAs grown on metamorphic SiGe/Si substrates (Journal of Applied Physics (2006) 100 (034503))

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作者：
Gonzalez, M.
Andre, C.L.
Walters, R.J.
Messenger, S.R.
Warner, J.H.
Lorentzen, J.R.
Pitera, A.J.
Fitzgerald, E.J.
Ringel, S.A.
机构：
[1] Department of Electrical and Computer Engineering, Ohio State University, Columbus, OH 43210, United States
[2] U.S. Naval Research Laboratory, Code 6818, Washington, DC 20375, United States
[3] Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States
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Journal of Applied Physics | 1600年 / 100卷 / 11期
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