Enhanced light output in InGaN/GaN light emitting diodes with excimer laser etching surfaces

被引:0
|
作者
Huang, Hung-Wen [1 ,2 ]
Chu, Jung-Tang [1 ]
Kao, Chih-Chiang [1 ]
Hsueh, Tao-Hung [1 ]
Lu, Tien-Chang [1 ]
Kuo, Hao-Chung [1 ]
Wang, Shing-Chung [1 ]
Yu, Chang-Chin [3 ]
Kuo, Shou-Yi [4 ]
机构
[1] Department of Photonics, Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
[2] TrueLight Corporation, Hsinchu 300, Taiwan
[3] Highlink Corporation, Hsinchu 300, Taiwan
[4] Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu 300, Taiwan
关键词
D O I
暂无
中图分类号
学科分类号
摘要
Journal article (JA)
引用
收藏
页码:3442 / 3445
相关论文
共 50 条
  • [1] Enhanced light output in InGaN/GaN light emitting diodes with excimer laser etching surfaces
    Huang, Hung-Wen
    Chu, Jung-Tang
    Kao, Chih-Chiang
    Hsueh, Tao-Hung
    Lu, Tien-Chang
    Kuo, Hao-Chung
    Wang, Shing-Chung
    Yu, Chang-Chin
    Kuo, Shou-Yi
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (4B): : 3442 - 3445
  • [2] Investigation of InGaN/GaN light emitting diodes with nano-roughened surface by excimer laser etching method
    Huang, Hung-Wen
    Kao, Chih-Chiang
    Chu, Jung-Tang
    Wang, Wei-Chih
    Lu, Tien-Chang
    Kuo, Hao-Chung
    Wang, Shing-Chung
    Yu, Chang-Chin
    Kuo, Shou-Yi
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2007, 136 (2-3): : 182 - 186
  • [3] Enhanced Light Output Power of InGaN/GaN Light Emitting Diodes with Embedded Air Prisms
    Kim, Hyung Gu
    Kim, Hee Yun
    Kim, Hyun Kyu
    Ryu, Jae Hyoung
    Kang, Ji Hye
    Han, Nam
    Uthirakumar, Periyayya
    Hong, Chang-Hee
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2010, 13 (02) : H42 - H44
  • [4] Enhanced light extraction from nanoporous surfaces of InGaN/GaN-based light emitting diodes
    Kim, Keunjoo
    Choi, Jaeho
    Bae, Tae Sung
    Jung, Mi
    Woo, Deok Ha
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2007, 46 (10 A): : 6682 - 6684
  • [5] Enhanced light extraction from nanoporous surfaces of InGaN/GaN-Based light emitting diodes
    Kim, Keunjoo
    Choi, Jacho
    Bae, Tae Sung
    Jung, Mi
    Woo, Deok Ha
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (10A): : 6682 - 6684
  • [6] Enhanced optical output in InGaN/GaN light-emitting diodes by tailored refractive index of nanoporous GaN
    Lee, Kwang Jae
    Oh, Semi
    Kim, Sang-Jo
    Yim, Sang-Youp
    Myoung, NoSoung
    Lee, Kwanjae
    Kim, Jin Soo
    Jung, Sung Hoon
    Chung, Tae-Hoon
    Park, Seong-Ju
    NANOTECHNOLOGY, 2019, 30 (41)
  • [7] Enhanced light output power in InGaN/GaN light-emitting diodes with a high reflective current blocking layer
    张晓洁
    杨瑞霞
    王静辉
    半导体学报, 2012, 33 (07) : 56 - 59
  • [8] Enhanced light output power in InGaN/GaN light-emitting diodes with a high reflective current blocking layer
    Zhang Xiaojie
    Yang Ruixia
    Wang Jinghui
    JOURNAL OF SEMICONDUCTORS, 2012, 33 (07)
  • [9] Greatly enhanced performance of InGaN/GaN nanorod light emitting diodes
    Bai, J.
    Wang, Q.
    Wang, T.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2012, 209 (03): : 477 - 480
  • [10] Enhanced light output power of GaN-based light emitting diodes with overcut sideholes formed by wet etching
    Kim, Hyun Kyu
    Kim, Hyung Gu
    Kim, Hee Yun
    Ryu, Jae Hyoung
    Kang, Ji Hye
    Han, Nam
    Uthirakumar, Periyayya
    Hong, Chang-Hee
    SOLID-STATE ELECTRONICS, 2010, 54 (05) : 575 - 578