Theoretical Study on Effect of Interfacial Properties on Optical Properties of InAs/GaSb Type Ⅱ Superlattices

被引：0

作者：

Ma Z. ^{[1
,2
]}

Li Y. ^{[1
,2
]}

Zhu S. ^{[1
,2
]}

Cheng F. ^{[1
,2
]}

Liu J. ^{[1
,2
]}

Wang L. ^{[1
,2
]}

Zhai S. ^{[1
,2
]}

Zhuo N. ^{[1
,2
]}

Chen Y. ^{[1
,2
]}

Zhang J. ^{[1
,2
]}

Liu S. ^{[1
,2
]}

Liu F. ^{[1
,2
]}

机构：

[1] Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing

[2] College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing

来源：

Faguang Xuebao/Chinese Journal of Luminescence | 2024年 / 45卷 / 05期

基金：

中国国家自然科学基金;

关键词：

antimonide; backward difference method; forward; interface state; superlattice;

D O I：

10.37188/CJL.20240054

中图分类号：

学科分类号：

摘要：

The InAs/GaSb type-II superlattice（SL）constitutes the fundamental structure for mid-infrared optoelectronic devices，characterized by its type-II band alignment that facilitates the spatial separation of electrons and holes across the interface，and a unique atomic configuration leading to a rich variety of interface states. Building upon the Burt-Foreman envelope function theory，we investigate the influence of different interface states on the electronic states and wave functions of the superlattice. Theoretical calculations indicate that both asymmetric distributions of interface states，namely gradual interface variation and interface potential，result in spin splitting of the heavy-hole band，while spin splitting in the light-hole band occurs only with the application of an interface potential. Additionally，we examine the trends in the band gap of the superlattice system when altering well width and barrier height. The results show that as the barrier thickness increases，the gap calculations under both abrupt and gradual interface states gradually decrease，converging with increasing thickness. In contrast，the gap calculated with interface potential treatment increases with the thickness of the barrier，exhibiting an opposite trend to the former two. This provides a theoretical foundation for the precise design of mid-infrared superlattice devices. © 2024 Editorial Office of Chinese Optics. All rights reserved.

引用

页码：817 / 823

页数：6

共 28 条

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