In situ measurements of cobalt thin-film surface roughening upon annealing

被引：0

作者：

Espinosa, Jorge ^{[1
]}

Shi, Hongtao ^{[1
,2
]}

Lederman, D. ^{[1
]}

机构：

[1] Department of Physics, West Virginia University, Morgantown, WV 26506-6315

[2] Department of Physics and Astronomy, Sonoma State University, Rohnert Park, CA 94928

来源：

Journal of Applied Physics | 2006年 / 99卷 / 02期

关键词：

Atomic force and scanning tunneling microscopies were employed to investigate the surface roughness of 5.0- and 8.0-nm -thick Co films as a function of annealing temperature. Films were epitaxially grown on (110) Al2 O3 at 315 °C via molecular-beam epitaxy. The as-grown films had a surface roughness average of approximately 0.7 nm. Images were acquired in situ at temperatures ranging from room temperature to 600 °C. For the 5.0 nm films; surface roughening abruptly starts at a critical temperature T0 =459 °C and increases depending on the final annealing temperature and annealing time. After waiting long periods of time; so that the film is in quasiequilibrium; the roughness increases with increasing temperature T with a power-law dependence (T T0 -1)0.5. This sudden roughening process is irreversible and possibly related to the hcp-fcc martensitic phase transition in cobalt; which occurs at 415 °C in bulk; or due to bulk defect diffusion. The autocorrelation function of the images above T0 shows that the in-plane island size during roughening is larger in a direction perpendicular to the sapphire terraces. The 8.0-nm -thick film sample revealed the formation of irregularly shaped pits with a lateral size of ∼350 nm at temperatures greater than ∼550 °C. © 2006 American Institute of Physics;

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