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- [1] MOCVD-grown InGaN/GaN MQW LEDs on Si(111)INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, 2002, : 267 - 271Poschenrieder, M论文数: 0 引用数: 0 h-index: 0机构: Univ Magdeburg, Fak Naturwissensch, Inst Expt Phys, D-39016 Magdeburg, Germany Univ Magdeburg, Fak Naturwissensch, Inst Expt Phys, D-39016 Magdeburg, GermanyFehse, K论文数: 0 引用数: 0 h-index: 0机构: Univ Magdeburg, Fak Naturwissensch, Inst Expt Phys, D-39016 Magdeburg, Germany Univ Magdeburg, Fak Naturwissensch, Inst Expt Phys, D-39016 Magdeburg, GermanySchulz, F论文数: 0 引用数: 0 h-index: 0机构: Univ Magdeburg, Fak Naturwissensch, Inst Expt Phys, D-39016 Magdeburg, Germany Univ Magdeburg, Fak Naturwissensch, Inst Expt Phys, D-39016 Magdeburg, GermanyBläsing, J论文数: 0 引用数: 0 h-index: 0机构: Univ Magdeburg, Fak Naturwissensch, Inst Expt Phys, D-39016 Magdeburg, Germany Univ Magdeburg, Fak Naturwissensch, Inst Expt Phys, D-39016 Magdeburg, GermanyWitte, H论文数: 0 引用数: 0 h-index: 0机构: Univ Magdeburg, Fak Naturwissensch, Inst Expt Phys, D-39016 Magdeburg, Germany Univ Magdeburg, Fak Naturwissensch, Inst Expt Phys, D-39016 Magdeburg, GermanyKrtschil, A论文数: 0 引用数: 0 h-index: 0机构: Univ Magdeburg, Fak Naturwissensch, Inst Expt Phys, D-39016 Magdeburg, Germany Univ Magdeburg, Fak Naturwissensch, Inst Expt Phys, D-39016 Magdeburg, GermanyDadgar, A论文数: 0 引用数: 0 h-index: 0机构: Univ Magdeburg, Fak Naturwissensch, Inst Expt Phys, D-39016 Magdeburg, Germany Univ Magdeburg, Fak Naturwissensch, Inst Expt Phys, D-39016 Magdeburg, GermanyDiez, A论文数: 0 引用数: 0 h-index: 0机构: Univ Magdeburg, Fak Naturwissensch, Inst Expt Phys, D-39016 Magdeburg, Germany Univ Magdeburg, Fak Naturwissensch, Inst Expt Phys, D-39016 Magdeburg, GermanyChristen, J论文数: 0 引用数: 0 h-index: 0机构: Univ Magdeburg, Fak Naturwissensch, Inst Expt Phys, D-39016 Magdeburg, Germany Univ Magdeburg, Fak Naturwissensch, Inst Expt Phys, D-39016 Magdeburg, GermanyKrost, A论文数: 0 引用数: 0 h-index: 0机构: Univ Magdeburg, Fak Naturwissensch, Inst Expt Phys, D-39016 Magdeburg, Germany Univ Magdeburg, Fak Naturwissensch, Inst Expt Phys, D-39016 Magdeburg, Germany
- [2] Temperature current-voltage characterisation of MOCVD grown InGaN/GaN MQW LEDsPHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006, 3 (06): : 2145 - 2148Moldovan, Grigore论文数: 0 引用数: 0 h-index: 0机构: Univ Cambridge, Dept Mat Sci & Met, Pembroke St, Cambridge CB2 3QZ, England Univ Cambridge, Dept Mat Sci & Met, Pembroke St, Cambridge CB2 3QZ, EnglandPhillips, Andrew论文数: 0 引用数: 0 h-index: 0机构: Phconsult Ltd, Cambridge CB1 2HR, England Univ Cambridge, Dept Mat Sci & Met, Pembroke St, Cambridge CB2 3QZ, EnglandThrush, E. J.论文数: 0 引用数: 0 h-index: 0机构: Thomas Swan Sci Equipment Ltd, Cambridge CB4 5UK, England Univ Cambridge, Dept Mat Sci & Met, Pembroke St, Cambridge CB2 3QZ, EnglandHumphreys, Colin J.论文数: 0 引用数: 0 h-index: 0机构: Univ Cambridge, Dept Mat Sci & Met, Pembroke St, Cambridge CB2 3QZ, England Univ Cambridge, Dept Mat Sci & Met, Pembroke St, Cambridge CB2 3QZ, England
- [3] Properties of InGaN/GaN MQW LEDs grown by MOCVD with and without hydrogen carrier gasVACUUM, 2018, 148 : 168 - 172Ekinci, Huseyin论文数: 0 引用数: 0 h-index: 0机构: Texas Tech Univ, Nano Tech Ctr, Lubbock, TX 79409 USA Erzincan Univ, Dept Phys, TR-24100 Erzincan, Turkey Texas Tech Univ, Nano Tech Ctr, Lubbock, TX 79409 USAKuryatkov, Vladimir V.论文数: 0 引用数: 0 h-index: 0机构: Texas Tech Univ, Nano Tech Ctr, Lubbock, TX 79409 USA Texas Tech Univ, Nano Tech Ctr, Lubbock, TX 79409 USAForgey, Chris论文数: 0 引用数: 0 h-index: 0机构: OEM Grp Inc, 2120 W Guadalupe Rd, Gilbert, AZ 85233 USA Texas Tech Univ, Nano Tech Ctr, Lubbock, TX 79409 USADabiran, Amir论文数: 0 引用数: 0 h-index: 0机构: Lightwave Photon Inc, 2500 Univ Ave W,B9, St Paul, MN 55114 USA Texas Tech Univ, Nano Tech Ctr, Lubbock, TX 79409 USAJorgenson, Robert论文数: 0 引用数: 0 h-index: 0机构: Lightwave Photon Inc, 2500 Univ Ave W,B9, St Paul, MN 55114 USA Texas Tech Univ, Nano Tech Ctr, Lubbock, TX 79409 USANikishin, Sergey A.论文数: 0 引用数: 0 h-index: 0机构: Texas Tech Univ, Nano Tech Ctr, Lubbock, TX 79409 USA Texas Tech Univ, Nano Tech Ctr, Lubbock, TX 79409 USA
- [4] Investigations of p-GaN cap layers of InGaN/GaN MQW blue LEDs grown by MOCVDGuangdianzi Jiguang/Journal of Optoelectronics Laser, 2006, 17 (05): : 517 - 521Niu, Nan-Hui论文数: 0 引用数: 0 h-index: 0机构: Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, ChinaWang, Huai-Bing论文数: 0 引用数: 0 h-index: 0机构: Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, ChinaLiu, Jian-Ping论文数: 0 引用数: 0 h-index: 0机构: Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, ChinaLiu, Nai-Xin论文数: 0 引用数: 0 h-index: 0机构: Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, ChinaXing, Yan-Hui论文数: 0 引用数: 0 h-index: 0机构: Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, ChinaHan, Jun论文数: 0 引用数: 0 h-index: 0机构: Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, ChinaDeng, Jun论文数: 0 引用数: 0 h-index: 0机构: Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, ChinaGuo, Xia论文数: 0 引用数: 0 h-index: 0机构: Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, ChinaShen, Guang-Di论文数: 0 引用数: 0 h-index: 0机构: Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
- [5] InGaN/GaN MQW high brightness LED grown by MOCVDOPTICAL MATERIALS, 2003, 23 (1-2) : 183 - 186Zhang, GY论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Res Ctr Wide Gap Semiconductor, Beijing 100871, Peoples R China Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Res Ctr Wide Gap Semiconductor, Beijing 100871, Peoples R ChinaYang, ZJ论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Res Ctr Wide Gap Semiconductor, Beijing 100871, Peoples R ChinaTong, YZ论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Res Ctr Wide Gap Semiconductor, Beijing 100871, Peoples R ChinaQin, ZX论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Res Ctr Wide Gap Semiconductor, Beijing 100871, Peoples R ChinaHu, XD论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Res Ctr Wide Gap Semiconductor, Beijing 100871, Peoples R ChinaChen, ZZ论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Res Ctr Wide Gap Semiconductor, Beijing 100871, Peoples R ChinaDing, XM论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Res Ctr Wide Gap Semiconductor, Beijing 100871, Peoples R ChinaLu, M论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Res Ctr Wide Gap Semiconductor, Beijing 100871, Peoples R ChinaLi, ZH论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Res Ctr Wide Gap Semiconductor, Beijing 100871, Peoples R ChinaYu, TJ论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Res Ctr Wide Gap Semiconductor, Beijing 100871, Peoples R ChinaZhang, L论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Res Ctr Wide Gap Semiconductor, Beijing 100871, Peoples R ChinaGan, ZZ论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Res Ctr Wide Gap Semiconductor, Beijing 100871, Peoples R ChinaZhao, Y论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Res Ctr Wide Gap Semiconductor, Beijing 100871, Peoples R ChinaYang, CF论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Res Ctr Wide Gap Semiconductor, Beijing 100871, Peoples R China
- [6] Emissions of the InGaN/GaN MQW LEDs with the InGaN well layer grown at different temperaturesSUPERLATTICES AND MICROSTRUCTURES, 2021, 160Li, Rui论文数: 0 引用数: 0 h-index: 0机构: Shandong Univ, Inst Novel Semicond, Sch Microelect, Jinan 250100, Peoples R China Shandong Univ, Inst Novel Semicond, Sch Microelect, Jinan 250100, Peoples R ChinaXu, Mingsheng论文数: 0 引用数: 0 h-index: 0机构: Shandong Univ, Inst Novel Semicond, Sch Microelect, Jinan 250100, Peoples R China Shandong Univ, Inst Novel Semicond, Sch Microelect, Jinan 250100, Peoples R ChinaWang, Chengxin论文数: 0 引用数: 0 h-index: 0机构: Shandong Inspur Huaguang Optoelect Co Ltd, Weifang 261061, Peoples R China Shandong Univ, Inst Novel Semicond, Sch Microelect, Jinan 250100, Peoples R ChinaQu, Shangda论文数: 0 引用数: 0 h-index: 0机构: Shandong Univ, Inst Novel Semicond, Sch Microelect, Jinan 250100, Peoples R China Shandong Univ, Inst Novel Semicond, Sch Microelect, Jinan 250100, Peoples R ChinaShi, Kaiju论文数: 0 引用数: 0 h-index: 0机构: Shandong Univ, Inst Novel Semicond, Sch Microelect, Jinan 250100, Peoples R China Shandong Univ, Inst Novel Semicond, Sch Microelect, Jinan 250100, Peoples R ChinaLi, Changfu论文数: 0 引用数: 0 h-index: 0机构: Shandong Univ, Inst Novel Semicond, Sch Microelect, Jinan 250100, Peoples R China Shandong Univ, Inst Novel Semicond, Sch Microelect, Jinan 250100, Peoples R ChinaXu, Xiangang论文数: 0 引用数: 0 h-index: 0机构: Shandong Univ, Inst Novel Semicond, Sch Microelect, Jinan 250100, Peoples R China Shandong Univ, Inst Novel Semicond, Sch Microelect, Jinan 250100, Peoples R ChinaJi, Ziwu论文数: 0 引用数: 0 h-index: 0机构: Shandong Univ, Inst Novel Semicond, Sch Microelect, Jinan 250100, Peoples R China Shandong Univ, Inst Novel Semicond, Sch Microelect, Jinan 250100, Peoples R China
- [7] InGaN/GaN MQW LEDs with Si treatment2005 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, 2005, : 506 - 507Hsu, YP论文数: 0 引用数: 0 h-index: 0机构: Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, TaiwanChang, SJ论文数: 0 引用数: 0 h-index: 0机构: Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, TaiwanSu, YK论文数: 0 引用数: 0 h-index: 0机构: Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, TaiwanTsai, JM论文数: 0 引用数: 0 h-index: 0机构: Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, TaiwanChen, SC论文数: 0 引用数: 0 h-index: 0机构: Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, TaiwanLai, WC论文数: 0 引用数: 0 h-index: 0机构: Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, TaiwanKuo, CH论文数: 0 引用数: 0 h-index: 0机构: Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, TaiwanChang, CS论文数: 0 引用数: 0 h-index: 0机构: Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan
- [8] Emission mechanism of the InGaN MQW grown by MOCVDIII-V NITRIDES, 1997, 449 : 665 - 670Narukawa, Y论文数: 0 引用数: 0 h-index: 0Kawakami, Y论文数: 0 引用数: 0 h-index: 0Fujita, S论文数: 0 引用数: 0 h-index: 0Fujita, S论文数: 0 引用数: 0 h-index: 0Nakamura, S论文数: 0 引用数: 0 h-index: 0
- [9] Temperature-dependent luminescent properties of dual-wavelength InGaN LEDsJOURNAL OF LUMINESCENCE, 2021, 234Arteev, D. S.论文数: 0 引用数: 0 h-index: 0机构: Ioffe Inst, 26 Politekhnicheskaya, St Petersburg 194021, Russia Ioffe Inst, 26 Politekhnicheskaya, St Petersburg 194021, RussiaSakharov, A., V论文数: 0 引用数: 0 h-index: 0机构: Ioffe Inst, 26 Politekhnicheskaya, St Petersburg 194021, Russia Ioffe Inst, 26 Politekhnicheskaya, St Petersburg 194021, RussiaNikolaev, A. E.论文数: 0 引用数: 0 h-index: 0机构: Ioffe Inst, 26 Politekhnicheskaya, St Petersburg 194021, Russia Ioffe Inst, 26 Politekhnicheskaya, St Petersburg 194021, RussiaLundin, W., V论文数: 0 引用数: 0 h-index: 0机构: Ioffe Inst, 26 Politekhnicheskaya, St Petersburg 194021, Russia Ioffe Inst, 26 Politekhnicheskaya, St Petersburg 194021, RussiaTsatsulnikov, A. F.论文数: 0 引用数: 0 h-index: 0机构: Ioffe Inst, 26 Politekhnicheskaya, St Petersburg 194021, Russia RAS, Res & Engn Ctr, Submicron Heterostruct Microelect, 26 Politekhnicheskaya, St Petersburg 194021, Russia Ioffe Inst, 26 Politekhnicheskaya, St Petersburg 194021, Russia
- [10] HIGH OPTICAL GAIN INGAN/GAN MQW ELECTROLUMINESCENT HETEROSTRUCTURES GROWN ON SILICON BY MOCVDCAOL 2008: PROCEEDINGS OF THE 4TH INTERNATIONAL CONFERENCE ON ADVANCED OPTOELECTRONICS AND LASERS, 2008, : 360 - +Lutsenko, Evgenii V.论文数: 0 引用数: 0 h-index: 0机构: Natl Acad Sci Belarus, BI Stepanov Phys Inst, Independence Ave 68, Minsk 220072, BELARUS Natl Acad Sci Belarus, BI Stepanov Phys Inst, Independence Ave 68, Minsk 220072, BELARUSTarasuk, Nikolai P.论文数: 0 引用数: 0 h-index: 0机构: Natl Acad Sci Belarus, BI Stepanov Phys Inst, Independence Ave 68, Minsk 220072, BELARUS Natl Acad Sci Belarus, BI Stepanov Phys Inst, Independence Ave 68, Minsk 220072, BELARUSVainilovich, Aliaksei G.论文数: 0 引用数: 0 h-index: 0机构: Natl Acad Sci Belarus, BI Stepanov Phys Inst, Independence Ave 68, Minsk 220072, BELARUS Natl Acad Sci Belarus, BI Stepanov Phys Inst, Independence Ave 68, Minsk 220072, BELARUSDanil-chyk, Alexander V.论文数: 0 引用数: 0 h-index: 0机构: Natl Acad Sci Belarus, BI Stepanov Phys Inst, Independence Ave 68, Minsk 220072, BELARUS Natl Acad Sci Belarus, BI Stepanov Phys Inst, Independence Ave 68, Minsk 220072, BELARUSPavlovskii, Viacheslav N.论文数: 0 引用数: 0 h-index: 0机构: Natl Acad Sci Belarus, BI Stepanov Phys Inst, Independence Ave 68, Minsk 220072, BELARUS Natl Acad Sci Belarus, BI Stepanov Phys Inst, Independence Ave 68, Minsk 220072, BELARUSYablonskii, Gennadi P.论文数: 0 引用数: 0 h-index: 0机构: Natl Acad Sci Belarus, BI Stepanov Phys Inst, Independence Ave 68, Minsk 220072, BELARUS Natl Acad Sci Belarus, BI Stepanov Phys Inst, Independence Ave 68, Minsk 220072, BELARUSKalisch, Holger论文数: 0 引用数: 0 h-index: 0机构: Rhein Westfal TH Aachen, Inst Theoretische Electrotech, Aachen, Germany Natl Acad Sci Belarus, BI Stepanov Phys Inst, Independence Ave 68, Minsk 220072, BELARUSJansen, Rolf H.论文数: 0 引用数: 0 h-index: 0机构: Rhein Westfal TH Aachen, Inst Theoretische Electrotech, Aachen, Germany Natl Acad Sci Belarus, BI Stepanov Phys Inst, Independence Ave 68, Minsk 220072, BELARUSBehmenburg, Hannes论文数: 0 引用数: 0 h-index: 0机构: AIXTRON AG, D-52072 Aachen, Germany Natl Acad Sci Belarus, BI Stepanov Phys Inst, Independence Ave 68, Minsk 220072, BELARUSDikme, Y. Imaz论文数: 0 引用数: 0 h-index: 0机构: AIXTRON AG, D-52072 Aachen, Germany Natl Acad Sci Belarus, BI Stepanov Phys Inst, Independence Ave 68, Minsk 220072, BELARUSSchineller, Bernd论文数: 0 引用数: 0 h-index: 0机构: AIXTRON AG, D-52072 Aachen, Germany Natl Acad Sci Belarus, BI Stepanov Phys Inst, Independence Ave 68, Minsk 220072, BELARUSHeuken, Michael论文数: 0 引用数: 0 h-index: 0机构: Rhein Westfal TH Aachen, Inst Theoretische Electrotech, Aachen, Germany AIXTRON AG, D-52072 Aachen, Germany Natl Acad Sci Belarus, BI Stepanov Phys Inst, Independence Ave 68, Minsk 220072, BELARUS