Process Technology - High-k Metal-Gate integration

被引：0
|
作者：
Texas Instruments [1 ]
机构：
来源：
Tech. Dig. Int. Electron Meet. IEDM | 2008年
关键词：
D O I：
10.1109/IEDM.2008.4796603
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Frequency Dependence of NBTI in High-k/Metal-gate Technology
    Hsieh, M. -H.
    Maji, D.
    Huang, Y. -C.
    Yew, T. -Y.
    Wang, W.
    Lee, Y. -H.
    Shih, J. R.
    Wu, K.
    2014 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2014,
  • [2] BTI reliability of 45 nm high-k plus metal-gate process technology
    Pae, S.
    Agostinelli, M.
    Brazie, M.
    Chau, R.
    Dewey, G.
    Ghani, T.
    Hattendorf, M.
    Hicks, J.
    Kavalieros, J.
    Kuhn, K.
    Kuhn, M.
    Maiz, J.
    Metz, M.
    Mistry, K.
    Prasad, C.
    Ramey, S.
    Roskowski, A.
    Sandford, J.
    Thomas, C.
    Thomas, J.
    Wiegand, C.
    Wiedemer, J.
    2008 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 46TH ANNUAL, 2008, : 352 - +
  • [3] Technology Scaling on High-K & Metal-Gate FinFET BTI Reliability
    Lee, Kyong Taek
    Kang, Wonchang
    Chung, Eun-Ae
    Kim, Gunrae
    Shim, Hyewon
    Lee, Hyunwoo
    Kim, Hyejin
    Choe, Minhyeok
    Lee, Nae-In
    Patel, Anuj
    Park, Junekyun
    Park, Jongwoo
    2013 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2013,
  • [4] Transistor mismatch in 32 nm high-k metal-gate process
    Yuan, X.
    Shimizu, T.
    Mahalingam, U.
    Brown, J. S.
    Habib, K.
    Tekleab, D. G.
    Su, T. -C.
    Satadru, S.
    Olsen, C. M.
    Lee, H.
    Pan, L. -H.
    Hook, T. B.
    Han, J. -P.
    Park, J. -E.
    Na, M. -H.
    Rim, K.
    ELECTRONICS LETTERS, 2010, 46 (10) : 708 - U66
  • [5] A New Method for Enhancing High-k/Metal-Gate Stack Performance and Reliability for High-k Last Integration
    Yew, K. S.
    Ang, D. S.
    Tang, L. J.
    IEEE ELECTRON DEVICE LETTERS, 2013, 34 (02) : 295 - 297
  • [6] Reliability Characterizations of Display Driver IC on High-k / Metal-Gate technology
    Kim, Donghoon
    Kim, Jungdong
    Bae, Kidan
    Kim, Hyejin
    Hwang, Lira
    Shin, Sangchul
    Park, Hyung-Nyung
    Ku, In-Taek
    Park, Jongwoo
    Pae, Sangwoo
    Lee, Haebum
    2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2016,
  • [7] Gate Dielectric TDDB Characterizations of Advanced High-K and Metal-Gate CMOS Logic Transistor Technology
    Pae, S.
    Prasad, C.
    Ramey, S.
    Thomas, J.
    Rahman, A.
    Lu, R.
    Hicks, J.
    Batzerl, S.
    Zhaol, Q.
    Hatfield, J.
    Liu, M.
    Parker, C.
    Woolery, B.
    2012 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2012,
  • [8] Modeling and Optimization of Variability in High-k/Metal-Gate MOSFETs
    Yu, T-H
    Ohtou, Tetsu
    Liu, K-M
    Chen, W-Y
    Hu, Y-P
    Cheng, C-F
    Sheu, Y-M
    2009 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2009, : 91 - +
  • [9] Integration issues of high-k and metal gate into conventional CMOS technology
    Song, SC
    Zhang, Z
    Huffman, C
    Bae, SH
    Sim, JH
    Kirsch, P
    Majhi, P
    Moumen, N
    Lee, BH
    THIN SOLID FILMS, 2006, 504 (1-2) : 170 - 173
  • [10] Damascene Metal Gate Technology for Damage-free Gate-Last High-k Process Integration
    Endres, Ralf
    Krauss, Tillmann
    Wessely, Frank
    Schwalke, Udo
    2009 3RD INTERNATIONAL CONFERENCE ON SIGNALS, CIRCUITS AND SYSTEMS (SCS 2009), 2009, : 43 - 45
12345