Suppressing Al memory effect on CVD growth of 4H-SiC epilayers by adding hydrogen chloride gas

被引：0
|
作者：
Ji, Shi-Yang [1 ]
Kojima, Kazutoshi [1 ]
Ishida, Yuuki [1 ]
Saito, Shingo [1 ]
Yoshida, Sadafumi [1 ]
Tsuchida, Hidekazu [2 ]
Okumura, Hajime [1 ]
机构：
[1] Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
[2] Central Research Institute of Electric Power Industry (CRIEPI), Yokosuka, Kanagawa 240-0196, Japan
来源：
Japanese Journal of Applied Physics | 2014年 / 53卷 / 4 SPEC. ISSUE期
关键词：
541.1 Aluminum - 712.1 Semiconducting Materials - 804.2 Inorganic Compounds;
D O I：
暂无
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学科分类号：
摘要：
34
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