Effect of rapid thermal annealing on photoluminescence properties of low-temperature grown InGaAs/GaAs multiple quantum wells

被引：0
|
作者：
Kajikawa, Yasutomo [1 ]
Nishimoto, Naoki [1 ]
Fujioka, Daisuke [1 ]
Ichida, Katsuya [1 ]
机构：
[1] Department of Electric and Control Systems Engineering, Interdisciplinary Faculty of Science and Engineering, Shimane University, 1060 Nishi-Kawatsu, Matsue 690-8504, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 4 A期
关键词：
25;
D O I：
暂无
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摘要：
Journal article (JA)
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页码：2412 / 2416
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