Dependence of switching current distribution on current pulse width of current-induced magnetization switching in MgO-based magnetic tunnel junction

被引：0
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作者：
Morota, Misako [1 ]
Fukushima, Akio [1 ]
Kubota, Hitoshi [1 ]
Yakushiji, Kay [1 ]
Yuasa, Shinji [1 ]
Ando, Koji [1 ]
机构：
[1] Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1, Umezono, Tsukuba 305-8568, Japan
来源：
Journal of Applied Physics | 2008年 / 103卷 / 07期
关键词：
Current-induced magnetization switching in an MgO-based magnetic tunnel junction (MTJ) was experimentally studied. Probabilistic distribution of a switching current was measured at various current pulse widths from 5 μs to 100 ms. A thermal stability parameter Δ of a free-layer magnetic moment and an intrinsic switching current density Jc0 of the MTJ were evaluated from the switching current distribution using a thermal activation model. The estimated Δ and Jc0 were approximately independent of the pulse width and were in good agreement with the values estimated from the pulse-width dependence of the switching current density; demonstrating the validity of the thermal activation model. © 2008 American Institute of Physics;
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