Initial stages of rejuvenation of vapor-deposited glasses during isothermal annealing: Contrast between experiment and simulation

被引:0
|
作者
Tracy, M. E. [1 ]
Kasting, B. J. [1 ]
Herrero, C. [2 ,3 ]
Berthier, L. [2 ,4 ]
Richert, R. [5 ]
Guiseppi-Elie, A. [6 ]
Ediger, M. D. [1 ]
机构
[1] Univ Wisconsin Madison, Dept Chem, 1101 Univ Ave, Madison, WI 53706 USA
[2] Univ Montpellier, CNRS, Lab Charles Coulomb L2C, F-34095 Montpellier, France
[3] Inst Laue Langevin, 71 Ave Martyrs, F-38042 Grenoble, France
[4] PSL Res Univ, Gulliver, UMR CNRS 7083, ESPCI Paris, F-75005 Paris, France
[5] Arizona State Univ, Sch Mol Sci, Tempe, AZ 85287 USA
[6] Texas A&M Univ, Dept Elect & Comp Engn, College Stn, TX 77843 USA
来源
JOURNAL OF CHEMICAL PHYSICS | 2024年 / 161卷 / 22期
基金
美国国家科学基金会;
关键词
BOSON PEAK PERSIST; SUPERCOOLED LIQUIDS; SURFACE-DIFFUSION; KINETIC STABILITY; METALLIC GLASSES; 2-LEVEL SYSTEMS; RELAXATION; DYNAMICS; TEMPERATURE; STATES;
D O I
10.1063/5.0236653
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Physical vapor deposition can prepare organic glasses with high kinetic stability. When heated, these glassy solids slowly transform into supercooled liquid in a process known as rejuvenation. In this study, we anneal vapor-deposited glasses of methyl-m-toluate for 6 h at 0.98T(g) to observe rejuvenation using dielectric spectroscopy. Glasses of moderate stability exhibited partial or full rejuvenation in 6 h. For highly stable glasses, prepared at substrate temperatures of 0.85T(g) and 0.80T(g), the 6 h annealing time is similar to 2% of the estimated transformation time, and no change in the onset temperature for the alpha relaxation process was observed, as expected. Surprisingly, for these highly stable glasses, annealing resulted in significant increases in the storage component of the dielectric susceptibility, without corresponding increases in the loss component. These changes are interpreted to indicate that short-term annealing rejuvenates a high frequency relaxation (e.g., the boson peak) within the stable glass. We compare these results to computer simulations of the rejuvenation of highly stable glasses generated by using the swap Monte Carlo algorithm. The in silico glasses, in contrast to the experiment, show no evidence of rejuvenation within the stable glass at times shorter than the alpha relaxation process.
引用
收藏
页数:12
相关论文
共 8 条
  • [1] Anomalous Transformation of Vapor-Deposited Highly Stable Glasses of Toluene into Mixed Glassy States by Annealing Above Tg
    Sepulveda, A.
    Leon-Gutierrez, E.
    Gonzalez-Silveira, M.
    Clavaguera-Mora, M. T.
    Rodriguez-Viejo, J.
    JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2012, 3 (07): : 919 - 923
  • [2] Relationship between aged and vapor-deposited organic glasses: Secondary relaxations in methyl-m-toluate
    Kasting, B. J.
    Beasley, M. S.
    Guiseppi-Elie, A.
    Richert, R.
    Ediger, M. D.
    JOURNAL OF CHEMICAL PHYSICS, 2019, 151 (14):
  • [3] REACTION AND DIFFUSION KINETICS DURING THE INITIAL-STAGES OF ISOTHERMAL CHEMICAL VAPOR INFILTRATION
    SHELDON, BW
    BESMANN, TM
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1991, 74 (12) : 3046 - 3053
  • [4] Shedding light on the initial growth of ZnO during plasma-enhanced atomic layer deposition on vapor-deposited polymer thin films
    Demelius, Lisanne
    Blatnik, Matthias
    Unger, Katrin
    Parlanti, Paola
    Gemmi, Mauro
    Coclite, Anna Maria
    APPLIED SURFACE SCIENCE, 2022, 604
  • [5] Microstructural evolution during non-isothermal annealing of a precipitation-hardenable aluminum alloy: Experiment and simulation
    Sepehrband, P.
    Wang, X.
    Jin, H.
    Esmaeili, S.
    ACTA MATERIALIA, 2015, 94 : 111 - 123
  • [6] Evolution of oxygen associated defects in Cz silicon during thermal annealing treatments: Comparison between experiment and simulation
    Nicolai, J.
    Burle, N.
    Pichaud, B.
    GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XIV, 2011, 178-179 : 188 - 191
  • [7] Growth of vapor-deposited amorphous Zr65Al7.5Cu27.5 films under oblique particle incidence investigated by experiment and simulation -: art. no. 205425
    Vauth, S
    Streng, C
    Mayr, SG
    Samwer, K
    PHYSICAL REVIEW B, 2003, 68 (20):
  • [8] Interfacial reaction between chemically vapor-deposited HfO2 thin films and a HF-cleaned Si substrate during film growth and postannealing
    Park, BK
    Park, J
    Cho, M
    Hwang, CS
    Oh, K
    Han, Y
    Yang, DY
    APPLIED PHYSICS LETTERS, 2002, 80 (13) : 2368 - 2370