Influence of pad surface asperity on removal rate in chemical mechanical polishing of large-diameter silicon wafer applied to substrate of GaN-based LEDs

被引：0
|
作者：
机构：
[1] Uneda, Michio
[2] Maeda, Yuki
[3] Shibuya, Kazutaka
[4] Nakamura, Yoshio
[5] Ichikawa, Daizo
[6] Fujii, Kiyomi
[7] Ishikawa, Ken-Ichi
来源：
Uneda, Michio (uneda@neptune.kanazawa-it.ac.jp) | 1600年 / M Y U Scientific Publishing Division卷 / 26期
基金：
日本学术振兴会;
关键词：
Substrates - Fast Fourier transforms - III-V semiconductors - Image analysis - Chemical analysis - Chemical mechanical polishing - Gallium nitride - Correlation methods - Light emitting diodes;
D O I：
10.18494/SAM.2014.1011
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摘要：
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