Electro-migration of impurities in TlBr

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[1] Kim, Ki Hyun

[2] Kim, Eunlim

[3] Kim, H.

[4] Tappero, R.

[5] Bolotnikov, A.E.

[6] Camarda, G.S.

[7] Hossain, A.

[8] Cirignano, L.

[9] James, R.B.

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| 1600年 / American Institute of Physics Inc.卷 / 114期

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We observed the electro-migration of Cu; Ag; and Au impurities that exist in positive-ion states in TlBr detectors under electric field strengths typically used for device operation. The migration occurred predominantly through bulk- and specific-channels; which are presumed to be a network of grain and sub-grain boundaries. The electro-migration velocity of Cu; and Au in TlBr is about 4-8 × 10-8 cm/s at room temperature under an electric field of 500-800 V/mm. The instability and polarization effects of TlBr detectors might well be correlated with the electro-migration of residual impurities in TlBr; which alters the internal electric field over time. The effect may also have been due to migration of the electrode material itself; which would allow for the possibility of a better choice for contact material and for depositing an effective diffusion barrier. From our findings; we suggest that applying our electro-migration technique for purifying material is a promising new way to remove electrically active metallic impurities in TlBr crystals; as well as other materials. © 2013 AIP Publishing LLC;

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