Thermal stability of deep levels between room temperature and 1500 °c in as-grown 3C-SiC

被引：0
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作者：
Alfieri, G. [1 ]
Nagasawa, H. [2 ]
Kimoto, T. [1 ,3 ]
机构：
[1] Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510, Japan
[2] SiC Development Center, Hoya Corporation, 1-17-16 Tanashioda, Sagamihara, Kanagawa 229-1125, Japan
[3] Photonics and Electronics Science and Engineering Center, Kyoto University, Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510, Japan
来源：
Journal of Applied Physics | 2009年 / 106卷 / 07期
基金：
日本学术振兴会;
关键词：
Deep level transient spectroscopy;
D O I：
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学科分类号：
摘要：
Journal article (JA)
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