Modified model of threshold voltage for thin-film

被引：0
|
作者：
Yao R.-H. [1 ]
Ou X.-P. [1 ]
机构：
[1] School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, Guangdong
来源：
Huanan Ligong Daxue Xuebao/Journal of South China University of Technology (Natural Science) | 2010年 / 38卷 / 01期
关键词：
Polysilicon; Surface potential; Thin-film transistor; Threshold voltage;
D O I：
10.3969/j.issn.1000-565X.2010.01.003
中图分类号：
学科分类号：
摘要：
In this paper, first, the surface potential of thin-film transistors with light-doped polysilicon is analyzed. Next, the gate voltage, which corresponds to the channel current that quickly increases when the surface potential deviates from the sub-threshold region, is considered as the threshold voltage. Then, by taking into consideration the single-exponential distribution of trap state density, the surface potential of the transistor is derived, and an analytical model of the threshold voltage is presented. Finally, a numerical simulation is performed to verify the model. The results indicate that the threshold voltage obtained by the proposed model perfectly matches that extracted by the second-derivative method.
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页码：14 / 17+43
相关论文
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