Inductively coupled plasma via hole etching of AlGaN/GaN HEMTs on SiC substrate

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National Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electron Devices Institute, Nanjing 210016, China [1 ]
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Pan Tao Ti Hsueh Pao | 2008年 / 12卷 / 2408-2411期
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Silicon carbide;
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