Influence of WO3-Doping on the Microstructure and Electrical Properties of ZnO-Bi2O3 Varistor Ceramics Sintered at 950°C

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[1] [1,2,3,Xiao, Xiangkai
[2] Zheng, Liaoying
[3] Cheng, Lihong
[4] Tian, Tian
[5] Ruan, Xuezheng
[6] 3,Podlogar, Mateja
[7] 3,Bernik, Slavko
[8] Li, Guorong
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Cheng, Lihong (chenglihong001@mail.sic.ac.cn) | 1600年 / Blackwell Publishing Inc., Postfach 10 11 61, 69451 Weinheim, Boschstrabe 12, 69469 Weinheim, Deutschland, 69469, Germany卷
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The phase evolution; microstructure; and electrical properties of WO3-doped ZnO-Bi2O3-based varistors were investigated for different amounts x (0 ≤ x ≤ 1.60 mol%) of the dopant. When x was less than 0.40; the dissolved W6+ in the β-Bi2O3 acted as a donor in the grain boundaries and reduced the electrical properties of the ZnO varistors. However; when x was 0.40 mol%; which meant an amount of WO3 equal to that of Bi2O3; the electrical properties dramatically increased; which means the W6+ donor effect is removed at the grain boundaries because a new Bi2WO6 phase was formed in the grain-boundary regions. The Bi2WO6 phase has high oxygen conductivity at high temperatures; it transfers more oxygen to the grain boundaries in order to further enhance the electrical properties. For x values higher than 0.40 (i.e; an addition of WO3 that is greater than the content of Bi2O3); the electrical properties were steadily reduced in comparison to the composition with x = 0.40. This could be explained by the reduced amount of Co; Mn; and Al at the grain boundaries and in the ZnO grains as a result of their incorporation into the ZnWO4 phase. The electrical properties of the ZnO grains and the grain boundaries were in agreement with the results of the impedance spectroscopy analysis. © 2015 The American Ceramic Society;
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