Laser induced damage in fused silica contaminated by Al film

被引:1
|
作者
Miao X. [1 ]
Yuan X. [1 ]
Wang C. [1 ]
Wang H. [1 ]
Lü H. [1 ]
Xiang X. [1 ]
Zheng W. [1 ]
机构
[1] Research Center of Laser Fusion, China Acad. of Eng. Phys., Mianyang 621900
关键词
Contamination; Damage growth; Damage morphology; Fused silica; Laser damage;
D O I
10.3788/HPLPB20102207.1653
中图分类号
学科分类号
摘要
Fused silica substrates were artificially contaminated to estimate the resistance against laser damage. Uniform thin contamination films (about 8 nm thick) were deposited on the substrates by Al sputtering. The laser induced damage threshold (LIDT) was tested at 355 nm with a 6.8 ns Nd:YAG laser in the air. Thermal absorption, thickness of the films and surface morphologies of fused silica before and after contamination were investigated by Stanford photo-thermal solutions, ellipsometer and optical microscope, respectively. The damage sites located on the clear fused silica, and on the input and output surface of the contaminated fused silica have been irradiated respectively with 355 nm pulsed laser. Photographs of the growth of the damaged sites have been taken by the microscope on line, and the areas of the damaged sites were measured. Experimental results show that the laser damage resistance of fused silica decreases by 30% with the input surface contaminated, and by about 15% with the output surface contaminated. There is exponential growth in the lateral size of damage sites located on output surface with shot number, whereas there is linear growth in the lateral site of damage sites located on input surface. The exponential growth coefficient of contaminated fused silica is larger by 30% than that of clear fused silica.
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页码:1653 / 1656
页数:3
相关论文
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