Growth of Al2O3 films by pulsed electron cyclotron resonance plasma deposition

被引：0
|
作者：
Sang L. [1 ]
Zhang Y. [1 ]
Chen Q. [1 ]
Li X. [1 ]
机构：
[1] Key Laboratory of Beijing for Graphic and Packaging Material and Technology, Beijing Institute of Graphic Communication
来源：
Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology | 2010年 / 30卷 / 03期
关键词：
Al[!sub]2[!/sub]O[!sub]3[!/sub; Atomic layer deposition; Electron cyclotron resonance; TMA;
D O I：
10.3969/j.issn.1672-7126.2010.03.16
中图分类号：
学科分类号：
摘要：
The Al2O3 films were grown by pulsed electron cyclotron resonance plasma deposition at room temperature on Si substrates with trimethylaluminum and oxygen as the precursor and oxidant, respectively. The impacts of film growth conditions on the quality of the film were studied. The microstructures and stoichiometries of the films were characterized with X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, atomic force microscopy and high resolution transmission electron microscopy. The results show that the fairly smooth, compact Al2O3 films with a thickness of 80 nm are amorphous. The sharp interface of the Al2O3 film and Si substrate was found to be well-defined.
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页码：293 / 296
页数：3
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