Bilinear magnetoelectric resistance induced by spin Hall effect

被引：0
|
作者：
Ruiyue Chu
Cheng Song
机构：
[1] SchoolofMaterialsScienceandEngineering,TsinghuaUniversity
来源：
Science China(Materials) | 2025年 / 68卷 / 02期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
<正>Magnetoresistance (MR) is a fundamental transport phenomenon crucial for reading magnetic states. It also plays a key role in understanding how time-reversal symmetry breaking affects electrical resistance. Landmark discoveries of anisotropic MR [1], giant MR [2], tunneling MR [3], and spin Hall magnetoresistance [4] have driven the development of diverse spintronic devices used in data storage, computing, and sensing technologies.
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页码：687 / 688
页数：2
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