Monolithic optocoupler isolated driver chip

被引：1

作者：

Cheng X. ^{[1
]}

Chang H. ^{[1
]}

Liu Y. ^{[2
]}

Deng C. ^{[1
]}

Yan X. ^{[1
]}

机构：

[1] School of Aerospace Engineering, Xiamen University, Xiamen

[2] School of Marine Information Engineering, Jimei University, Xiamen

来源：

Guangxue Jingmi Gongcheng/Optics and Precision Engineering | 2023年 / 31卷 / 07期

关键词：

collaborative design; low delay; monolithic integration; optocoupler isolation;

D O I：

10.37188/OPE.20233107.1022

中图分类号：

学科分类号：

摘要：

In the power semiconductor market，insulated gate bipolar transistor（IGBT）and silicon carbide metal-oxide-semiconductor field-effect transistors（SiC MOSFETs）have excellent voltage resistance and frequency characteristics，and thus gradually replaced the traditional MOSFETs. The reliability design of IGBT and SiC MOSFET driver circuits is associated with rigorous challenges. Therefore，an optocoupler-isolated gate driver chip was designed in this study. Monolithic integration was realized by co-designing photodetectors and driver circuits. Silveraco software was used to simulate the photodetector. The simulation results indicate that the responsivity of the photodetector to 800 nm infrared light is 0. 277 A/W，and the -3 dB bandwidth is approximately 90 MHz. Further，the optical structure of the optocoupler was optimized to effectively isolate the control end and the rear high-voltage drive circuit，and thus the crosstalk problem was addressed. The 0. 18 μm 40 V bipolar-CMOS-DMOS（BCD）technique was used to tape out and test the package chip. The chip test results indicate that the chip propagation delay is only 98 ns when the input current of the light source is 10 mA，the chip power supply voltage is 12–40 V，and the input signal frequency is 20 kHz. © 2023 Chinese Academy of Sciences. All rights reserved.

引用

页码：1022 / 1030

页数：8

共 14 条

[1] LIANG Z X, NING P Q, WANG F., Development of advanced all-SiC power modules ［J］, IEEE Transactions on Power Electronics, 29, 5, pp. 2289-2295, (2014)
[2] WANG J Y, SUN W., SiC MOSFET drive circuit design for full bridge converter［J］, Power Electronics, 54, 2, pp. 120-124, (2020)
[3] SCHRITTWIESER L，LEIBL M，HAIDER M，et al. 99. 3% efficient three-phase buck-type all-SiC SWISS rectifier for DC distribution systems ［C］, 2017 IEEE Applied Power Electronics Conference and Exposition（APEC）, pp. 2173-2178, (2017)
[4] WANG X D, ZHAO Z M，, LI K，, Et al., Analytical methodology for loss calculation of SiC MOSFETs ［J］, IEEE Journal of Emerging and Selected Topics in Power Electronics, 7, 1, pp. 71-83, (2019)
[5] DENG M C., Active gate driver for high power SiC-MOSFET module with source current feedback and P-D controller ［C］, 2021 IEEE 12th Energy Conversion Congress & Exposition-Asia （ECCE-Asia）, pp. 1350-1353
[6] WILLIAMS R，, Et al., Gate driver protection methods for SiC MOSFET short circuit testing［C］, 2021 IEEE International Reliability Physics Symposium （IRPS）, pp. 1-4
[7] WANG J J，, CHEN X K, GU J N，, Et al., A high-power IGBT module drive circuit design［J］, Small & Special Electrical Machines, 49, 11, pp. 43-46, (2021)
[8] Design of Gate Driver Circuit for Si-IGBT+SiC-SBD Hybrid Module［D］, (2017)
[9] YU B W., Research on Driver Circuit and Power Circuit Oscillation Problems of High Power SiC MOSFET Modules［D］, (2021)
[10] SHI X F, PANG X，, ZHU L J，, Et al., Development of photoelectric integrated single photon avalanche photodiode and front-end circuit based on BCD technology［J］, Opt. Precision Eng, 29, 2, pp. 267-277, (2021)

← 1 2 →