Influence of Binding Agent on the Cutting Performance and Friction Wear Characteristics of Catalytic Composite Abrasive Cluster

被引:2
|
作者
Ding, Yangyang [1 ]
Wang, Zhankui [1 ,2 ]
Huang, Shangci [3 ]
Liu, Kuncheng [1 ]
Feng, Wei [3 ]
Pang, Minghua [1 ]
Chen, Jiapeng [4 ]
Su, Jianxiu [1 ]
机构
[1] Henan Inst Sci & Technol, Sch Mech & Elect Engn, Xinxiang 453003, Henan, Peoples R China
[2] Henan Univ Sci & Technol, Sch Informat Engn, Luoyang 471000, Henan, Peoples R China
[3] Yancheng Inst Technol, Sch Mech Engn, Yancheng 224051, Peoples R China
[4] Shanghai Univ Engn Sci, Sch Informat Engn, Shanghai 201620, Peoples R China
基金
中国国家自然科学基金;
关键词
chemical mechanical polishing; microelectronics - semiconductor materials; microelectronics - semiconductor processing; nanoscale materials; semiconductors; SiC; silicon carbide;
D O I
10.1149/2162-8777/ad83ee
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
To improve the polishing efficiency and process stability of catalytic composite abrasive clusters (CCAC), CCAC containing different binding agent ratios was investigated. Five groups of CCAC with different binding agent ratios were prepared for friction chemical polishing of silicon carbide (SiC), respectively. Based on material removal rate (MRR) and surface roughness (Ra) as evaluation metrics, the polishing performance of five groups of CCAC were compared. Subsequently, wear experiments were carried by block shaped CCAC with diameter of 1.6 mm, as well as single crystal diamond (SCD) abrasives with the same particle size. The friction coefficient and the cross-sectional area at the worn area of wear were measured to evaluate the effect of binding agent content on the continuous cutting performance of the abrasive as well as on the tribological properties. The experimental results showed that #3 abrasive exhibited the highest machining efficiency (MRR reaches 330.535 nm min-1) and better surface roughness (Ra reaches 22.741 nm). Excessive or insufficient bonding agent in CCAC will affect the processing performance of the abrasive. When the proportion of binding agent in the abrasive is 25%, CCAC has better processing ability and can realize efficient polishing of SiC wafers.
引用
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页数:11
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