Estimation of Switching Transients and Power Losses of SiC-based Power MOSFET Inverter Using Electromagnetic-circuit Co-simulation during Six-step Commutation

被引：0

作者：

Liu, Yan-Cheng ^{[1
,2
,3
]}

Cheng, Hsien-Chie ^{[1
,2
]}

Lin, Hsin-Han ^{[3
]}

Chiou, Shian-Chiau ^{[3
]}

Wu, Sheng-Tai ^{[3
]}

Chang, Tao-Chih ^{[3
]}

机构：

[1] Program of Mechanical and Aeronautical Engineering, Feng Chia University, Taichung, Taiwan

[2] Feng Chia University, Department of Aerospace and Systems Engineering, Taichung, Taiwan

[3] Industrial Technology Research Institute, Wbg Device and Module Design Department, Hsinchu, Taiwan

来源：

2022 International Conference on Electronics Packaging, ICEP 2022 | 2022年

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Drain current - Electric inverters - Electromagnetic simulation - Inductance - Metals - MOS devices - Oxide semiconductors - Power MOSFET - Pulse width modulation - Silicon carbide - Switching - Timing circuits - Voltage control - Wide band gap semiconductors

引用

页码：159 / 160