Investigating the impact of Gd3+ ion substitution in Sr2FeTiO6: insights into magnetic, electrical, and structural properties

被引:4
|
作者
Punitha, J. Stella [1 ]
Raji, Ramesh Kumar [2 ,3 ]
Kumar, K. Saravana [4 ]
Ramachandran, Tholkappiyan [5 ]
Hamed, Fathalla [2 ]
Nataraj, A. [1 ]
机构
[1] SRM Inst Sci & Technol, Dept Phys, Ramapuram Campus, Chennai 600089, Tamilnadu, India
[2] United Arab Emirates Univ, Coll Sci, Dept Phys, POB 15551, Al Ain, U Arab Emirates
[3] Surana Coll Autonomous, Dept Phys, Bengaluru 560004, Karnataka, India
[4] Sri S Ramasamy Naidu Mem Coll, Dept Phys, Sattur 626203, Tamil Nadu, India
[5] Saveetha Inst Med & Tech Sci, Saveetha Sch Engn, Dept Phys, Chennai 602105, India
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2024年 / 130卷 / 11期
关键词
Sr2-xGdxFeTiO6 double perovskites; Rietveld refinement; X-ray photoelectron spectroscopy; Electrical and magnetic characteristics; PEROVSKITE; OXIDES;
D O I
10.1007/s00339-024-08012-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In the present investigations, Gd3+ ions were substituted at the Sr2+ site through conventional solid state reaction technique. The influence of Gd3+ ion substitution on the physical attributes of Sr2FeTiO6 (SFTO) was meticulously examined. The basic structure of Sr2 - xGdxFeTiO6 (SGFTO) (x = 0.2 to 0.8), was employed to start the Rietveld structural refinement of the powder X-ray diffraction patterns. This process confirmed the presence of a cubic structure with a space group of Pm3m. The replacement of Gd3+ ions, noted for their larger ionic radii, led to a minor increase in the lattice parameters and the volume of the unit cell. The identity of the elements within the compound was determined by examining their oxidation states through X-ray photoelectron spectroscopy. The SEM images reveal that as Gd content increases in the SGFTO samples, the structure becomes denser and more agglomerated, with reduced porosity and less uniform particle sizes. This suggests that higher Gd content leads to a more compact morphology, potentially impacting the material's electrochemical performance and mechanical stability. The use of diffuse reflectance measurements confirmed that the band gap values decreased slightly from 2.95 eV to 2.24 eV for the Sr2 - xGdxFeTiO6 (x = 0.2-0.8) materials, indicating that these synthesized samples exhibit semiconductor nature. The study investigated how often the dielectric constant and its behavior change with temperature, and these measurements proved that as the amount of Gd3+ in the material increased from 0.2 to 0.8, the dielectric constant also increases. The research on magnetization showed that the prepared materials had a stronger magnetic property and displayed a antiferromagnetic behavior. All synthesized materials made in this way has the possibility to be used in today's electronic devices, magneto-optical storage devices, and magneto-dielectric technologies. Highlights center dot The study investigates the substitution of Gd3+ ions at the Sr2+ site in Sr2FeTiO6 using the solid-state reaction method, examining its impact on the material's physical properties. center dot Rietveld refinement of X-ray diffraction patterns confirmed that Sr2-xGdxFeTiO6 (x = 0.2-0.8) maintains a cubic symmetry with a Pm3m space group, with Gd3+ ion substitution causing a slight increase in lattice parameters and unit cell volume. center dot X-ray photoelectron spectroscopy and EDAX pattern analysis confirmed the presence and uniform distribution of Sr, Gd, Fe, Ti and O elements, indicating a homogeneous and uniform structure. center dot Diffuse reflectance measurements showed a reduction in band gap values from 2.95 eV to 2.24 eV with increasing Gd3+ substitution, indicating a semiconductor-like nature of the synthesized samples. center dot Dielectric constant measurements revealed a progressive increase with higher Gd content, while magnetization analysis indicated an enhanced magnetic nature with antiferromagnetic character, highlighting potential applications in electronic technologies, magneto-optical storage systems, and optoelectronic and sensor devices.
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页数:11
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