The Performance Improvement of Thin Film Bulk Acoustic Resonators by Frame Structure

被引：0

作者：

Wu Y.-L. ^{[1
]}

Wu H.-P. ^{[2
]}

Lai Z.-G. ^{[3
]}

Cai X. ^{[3
]}

Tang B. ^{[3
]}

Yang Q.-H. ^{[2
,3
]}

Yang Y.-H. ^{[1
]}

Wang W.-M. ^{[2
]}

机构：

[1] School of Integrated Circuits, Beijing University of Posts and Telecommunications, Beijing

[2] School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing

[3] HunterSun Electronics Company，Ltd., Jiangsu, Suzhou

来源：

Tien Tzu Hsueh Pao/Acta Electronica Sinica | 2024年 / 52卷 / 02期

基金：

中国国家自然科学基金;

关键词：

film bulk acoustic resonator; frame structure; impedance phase fluctuation; taping out experiment;

D O I：

10.12263/DZXB.20220346

中图分类号：

学科分类号：

摘要：

The effect of frame on the performance improvement of thin film bulk acoustic resonator(FBAR)is studied. Based on the basic theory of reflection and matching of two kinds of frame structures to keep acoustic energy, according to their functional characteristics, several groups of frame microstructure combinations of low frequency and high frequency are determined experimentally, and the two groups of FBAR are taped out. Finally, the resonator of all groups is obtained by on-wafer test. The selected frame structure group can improve the performance of both low-frequency and high-frequency FBAR. For low frequency (around 1.7 GHz) FBAR, the quality factor of parallel resonance can be increased by more than 1 000. For high frequency (around 5.5 GHz) FBAR, the quality factor of parallel resonance can be increased by more than 300. For the high frequency FBAR with strong transverse parasitic mode, the optimized frame structure can improve the transverse parasitic suppression and reduce the impedance phase fluctuation under the series resonant frequency by more than 5°. © 2024 Chinese Institute of Electronics. All rights reserved.

引用

页码：407 / 413

页数：6

共 10 条

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