Robust edge photogalvanic effect in thin-film WTe2

The photogalvanic effect (PGE) in Weyl semimetals, such as WTe2 and MoTe2, has been widely observed and is considered a promising phenomenon for advancing Weyl semimetal-based optoelectronic devices. However, as device dimensions continue to shrink, edge effects on photocurrent generation and modulation become increasingly significant and cannot be overlooked. Herein, we have discovered a locally enhanced edge linear photogalvanic effect at the edge of WTe2 thin-film devices using a home-built polarization-modulated scanning photocurrent system, which arises from symmetry breaking. Furthermore, the magnitude and direction of this edge photocurrent are modulated by the polarization direction of the incident light. This research provides valuable insights for the development of polarization-sensitive photodetectors based on layered type-II Weyl semimetals.