28 nm RRAM-based reconfigurable true random number generator

被引：0
|
作者：
Song C. [1 ]
Zheng C. [1 ]
Chen C. [1 ]
机构：
[1] School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen
来源：
Zhejiang Daxue Xuebao (Gongxue Ban)/Journal of Zhejiang University (Engineering Science) | 2024年 / 58卷 / 07期
关键词：
current-starved ring oscillator; entropy source; resistive random access memory (RRAM); translinear; true random number generator (TRNG);
D O I：
10.3785/j.issn.1008-973X.2024.07.021
中图分类号：
学科分类号：
摘要：
An alternating read and write mode was proposed based on the current-starved ring oscillator (CSRO) true random number generator (TRNG) with resistance random access memory (RRAM), and the entropy source reconstruction scheme was optimized. An entropy configurable resistance window clamping circuit (ECRWCC) was proposed to address the trans conductor linearization issues of RRAM under multiple operating cycles. By reducing the resistance window to maximize the nonlinearity of RRAM, the phenomenon of over-set and over-reset was effectively avoided in ECRWCC, and the stability of the entropy source was ensured. The TRNG was tapeout with a UMC 28 nm HKMG process. The statistical test results of the output data passed the true random number standard test for all test sets of NIST SP800-22. The results showed that within the 95% confidence interval of the Gaussian distribution, the autocorrelation function, of all statistics were in the range of −0.003 and 0.003, and the output sequence had good randomness. © 2024 Zhejiang University. All rights reserved.
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页码：1516 / 1523
页数：7
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