Enhancement of thermoelectric performance by Ag/Bi/Fe co-doping into Cu3SbSe4 ceramics for green thermoelectric applications

被引:2
|
作者
Wang, Honglei [1 ]
Tian, Zixuan [1 ]
Qu, Jingchen [1 ]
Fu, Zhuang [1 ]
Zhao, Lijun [1 ]
Dong, Songtao [1 ]
Ju, Hongbo [2 ]
机构
[1] Jiangsu Univ Sci & Technol, Sch Mat Sci & Engn, Zhenjiang 212003, Peoples R China
[2] Univ Coimbra, Dept Mech Engn, CEMMPRE, ARISE, Rua Luis Reis St, P-3030788 Coimbra, Portugal
基金
中国国家自然科学基金;
关键词
Cu; 3; SbSe; 4; double _ element doping; Lattice thermal conductivity; Thermoelectric properties; THERMAL-CONDUCTIVITY; NANOCOMPOSITES; GERMANIUM; COPPER; POWER;
D O I
10.1016/j.ceramint.2024.08.465
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Cu3SbSe4 is recognized for its abundant elemental availability, cost-effectiveness, and non-toxic properties, making it a promising candidate for thermoelectric applications at medium temperatures. This study explored the preparation of Bi/Fe, Ag/Fe, and Ag/Bi double-doped Cu3SbSe4 ceramics using vacuum melting and cold isostatic pressing techniques. The focus was on examining the influence of these dopants on the microstructural and thermoelectric performances of Cu3SbSe4. The analysis revealed the presence of Cu3SbSe4 and Cu2_xSe phases in the doped samples. Double doping optimized the carrier concentration, increased the effective mass, and significantly enhanced the electrical conductivity from 12.45 to 64.01 S cm_ 1. Notably, the power factor of the Cu2.85Ag0.15Sb0.985Bi0.015Se4 sample reached 649.1 mu Wm_ 1K_ 2 at 573 K. Furthermore, the thermal conductivity was significantly reduced to 0.73 W/mK. The maximum ZT value of the Cu2.85Ag0.15Sb0.985Bi0.015Se4 sample was 0.47 at 573 K. These breakthrough results demonstrate that dual doping markedly enhances the thermoelectric properties of the Cu3SbSe4 system.
引用
收藏
页码:46239 / 46245
页数:7
相关论文
共 50 条
  • [1] Enhancement in the thermoelectric properties of Cu3SbSe4 by Sn doping
    K. Shyam Prasad
    Ashok Rao
    Journal of Materials Science: Materials in Electronics, 2019, 30 : 16596 - 16605
  • [2] Enhancement in the thermoelectric properties of Cu3SbSe4 by Sn doping
    Prasad, K. Shyam
    Rao, Ashok
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2019, 30 (17) : 16596 - 16605
  • [3] Effect of Ga doping on the thermoelectric performance of Cu3SbSe4
    Chen Luo-Na
    Liu Ye-Feng
    Zhang Ji-Ye
    Yang Jiong
    Xing Juan-Juan
    Luo Jun
    Zhang Wen-Qing
    ACTA PHYSICA SINICA, 2017, 66 (16)
  • [4] Doping Effects on the Thermoelectric Properties of Cu3SbSe4
    Skoug, Eric J.
    Cain, Jeffrey D.
    Majsztrik, Paul
    Kirkham, Melanie
    Lara-Curzio, Edgar
    Morelli, Donald T.
    SCIENCE OF ADVANCED MATERIALS, 2011, 3 (04) : 602 - 606
  • [5] Enhancement of low-temperature thermoelectric performance via Pb doping in Cu3SbSe4
    Pal, Anand
    Prasad, K. Shyam
    Gurukrishna, K.
    Mangavati, Suraj
    Poornesh, P.
    Rao, Ashok
    Chung, Yin-Chun
    Kuo, Y. K.
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2023, 175
  • [6] Enhanced thermoelectric properties of Cu3SbSe4 by germanium doping
    Chang, Chia-Hsiang
    Chen, Cheng-Lung
    Chiu, Wan-Ting
    Chen, Yang-Yuan
    MATERIALS LETTERS, 2017, 186 : 227 - 230
  • [7] Improvement of thermoelectric properties of Cu3SbSe4 compound by In doping
    Zhang, Dan
    Yang, Junyou
    Jiang, Qinghui
    Fu, Liangwei
    Xiao, Ye
    Luo, Yubo
    Zhou, Zhiwei
    MATERIALS & DESIGN, 2016, 98 : 150 - 154
  • [8] Enhancement in thermoelectric performance of Cu3SbSe4 thin films by In(III) doping; synthesized by arrested precipitation technique
    Ghanwat, Vishvanath B.
    Mali, Sawanta S.
    Bagade, Chaitali S.
    Khot, Kishorkumar V.
    Desai, Neha D.
    Hong, Chang Kook
    Bhosale, P. N.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2018, 29 (10) : 8793 - 8800
  • [9] Enhancement in thermoelectric performance of Cu3SbSe4 thin films by In(III) doping; synthesized by arrested precipitation technique
    Vishvanath B. Ghanwat
    Sawanta S. Mali
    Chaitali S. Bagade
    Kishorkumar V. Khot
    Neha D. Desai
    Chang Kook Hong
    P. N. Bhosale
    Journal of Materials Science: Materials in Electronics, 2018, 29 : 8793 - 8800
  • [10] Effects of bismuth doping on the thermoelectric properties of Cu3SbSe4 at moderate temperatures
    Li, X. Y.
    Li, D.
    Xin, H. X.
    Zhang, J.
    Song, C. J.
    Qin, X. Y.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2013, 561 : 105 - 108