High Power 970 nm Semiconductor Laser With A Tunable Grating External Cavity

被引：0

作者：

Su P. ^{[1
]}

Gao X. ^{[1
]}

Zhang Y. ^{[1
]}

Zhao R. ^{[1
]}

Fu D. ^{[1
]}

Bo B. ^{[1
]}

机构：

[1] State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun

来源：

Faguang Xuebao/Chinese Journal of Luminescence | 2023年 / 44卷 / 04期

基金：

中国国家自然科学基金;

关键词：

diffraction grating; semiconductor laser; threshold current; wavelength tuning;

D O I：

10.37188/CJL.20220354

中图分类号：

学科分类号：

摘要：

Broad-area stripe semiconductor lasers are widely used in laser pumping, laser processing and other fields. In order to solve the problems of wide output spectrum and small tuning range of broad-area stripe semiconductor lasers, reflective diffraction grating with diffraction efficiency of 28% and 55% was used as a feedback element to construct a broad-area 970 nm semiconductor laser with a grating external cavity. The effect of the parameters of semiconductor laser with a grating external cavity in Littrow configuration on its performance(tuning range, power, threshold current, linewidth)was investigated. The experimental results show that the tunable laser output with narrow linewidth can be obtained by optimizing the structure, the tuning range of the outer cavity laser can be increased by increasing the temperature appropriately, the tuning range of the outer cavity laser can be improved and the threshold current can be reduced by using a grating with higher diffraction efficiency. The maximum wavelength tuning range of semiconductor laser with a grating external cavity based on S-polarization is 27. 87 nm, the spectral linewidth pressure is narrowed to 0. 2 nm, and the output power can reach 1. 11 W. © 2023 Chines Academy of Sciences. All rights reserved.

引用

页码：664 / 672

页数：8

共 19 条

[1] CHEN L H, YANG G W, LIU Y X., Development of semiconductor lasers, Chin. J. Lasers, 47, 5, (2020)
[2] WANG L J, NING Y Q, QIN L, Et al., Development of high power diode laser, Chin. J. Lumin, 36, 1, pp. 1-19, (2015)
[3] LIU G J, BO B X, QU Y, Et al., High power semiconductor lasers, Infrared Laser Eng, 36, pp. 4-6, (2007)
[4] WANG S L, FANG F Z., High power laser and its development, Laser Optoelectr. Prog, 54, 9, (2017)
[5] MUKHTAR S, SUN X B, ASHRY I, Et al., Tunable violet laser diode system for optical wireless communication, IEEE Photon. Technol. Lett, 32, 9, pp. 546-549, (2020)
[6] GASMI K, ALJALAL A, AL-BASHEER W., Blue external-cavity diode laser for NO<sub>2</sub> gas detection, Proceedings Volume 11356, Semiconductor Lasers and Laser Dynamics Ⅸ, (2020)
[7] YANG Q F, SHEN B Q, WANG H M, Et al., Vernier spectrometer using counterpropagating soliton microcombs, Science, 363, 6430, pp. 965-968, (2019)
[8] LI B, GAO J, ZHAO J, Et al., Study on broad tuning range and narrow line-width 405 nm blue-violet diode laser with grating external cavity, Chin. J. Lasers, 42, 12, (2015)
[9] NYAUPANE P R, LIKAMWA P L, BRAIMAN Y., Spectral linewidth narrowing of two broad-area blue laser diodes(445 nm)with a common external cavity, Opt. Lett, 46, 11, pp. 2718-2721, (2021)
[10] WANG F, LV X Q, LIU G K, Et al., 785 nm grating-coupled external-cavity laser for shifted-excitation Raman difference spectroscopy, J. Opt. Technol, 84, 2, pp. 89-94, (2017)

← 1 2 →