Terahertz Light-Field Imaging With Silicon Technologies

被引：2
|
作者：
Pfeiffer, U. R. [1 ]
Kutaish, A. [1 ]
机构：
[1] Univ Wuppertal, Inst High Frequency & Commun Technol, D-42119 Wuppertal, Germany
来源：
IEEE OPEN JOURNAL OF THE SOLID-STATE CIRCUITS SOCIETY | 2024年 / 4卷
基金：
欧洲研究理事会;
关键词：
Imaging; Detectors; Silicon; Cameras; Transistors; Quantum cascade lasers; Masers; fields; plenoptic function; silicon-germanium (SiGe); terahertz imaging; FOCAL-PLANE ARRAY; THZ; CAMERA; RADAR; POWER; TIME;
D O I：
10.1109/OJSSCS.2023.3328975
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The terahertz (THz) frequency range is widely considered the most challenging and underdeveloped frequency range due to the lack of technologies to effectively bridge the transition region between microwaves (below 100 GHz) and optics (above 10 000 GHz). Although THz radiation would be perfect for material identification and as a safe alternative to X-rays for producing high-resolution images of the interior of opaque objects, first a fundamentally new approach is needed to establish novel devices and techniques.
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页码：1 / 11
页数：11
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